Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons

Journal Article · Mon Feb 09 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4907948· OSTI ID:22412620

Wang, Li-Xian; Yan, Yuan ^[1]; Liao, Zhi-Min; Yu, Da-Peng ^[1]

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1. State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

We report a gate-voltage modulation on the weak anti-localization of individual topological insulator Bi{sub 2}Se{sub 3} nanoribbons. The phase coherence length decreases with decreasing the carrier density of the surface states on the bottom surface of the Bi{sub 2}Se{sub 3} nanoribbon as tuning the gate voltage from 0 to −100 V, indicating that the electron-electron interaction dominates the decoherence at low carrier density. Furthermore, we observe an abnormal conductance decline at positive gate voltage regime, which is ascribed to the capture of surface carriers by the trapping centers in the surface oxidation layer.

• OSTI ID: 22412620
• Journal Information: Applied Physics Letters, Vol. 106, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH SELENIDES
CAPTURE
CARRIER DENSITY
CHARGE CARRIERS
COHERENCE LENGTH
ELECTRIC POTENTIAL
ELECTRON-ELECTRON COUPLING
LAYERS
NANOSTRUCTURES
OXIDATION
SURFACES
TRAPPING