Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons

doi:https://doi.org/10.1063/1.4907948

Title: Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons

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Abstract

We report a gate-voltage modulation on the weak anti-localization of individual topological insulator Bi{sub 2}Se{sub 3} nanoribbons. The phase coherence length decreases with decreasing the carrier density of the surface states on the bottom surface of the Bi{sub 2}Se{sub 3} nanoribbon as tuning the gate voltage from 0 to −100 V, indicating that the electron-electron interaction dominates the decoherence at low carrier density. Furthermore, we observe an abnormal conductance decline at positive gate voltage regime, which is ascribed to the capture of surface carriers by the trapping centers in the surface oxidation layer.

Authors:

Wang, Li-Xian; Yan, Yuan ^[1]; Liao, Zhi-Min; Yu, Da-Peng ^[1]

State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

Publication Date:: 2015-02-09

OSTI Identifier:: 22412620

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH SELENIDES; CAPTURE; CARRIER DENSITY; CHARGE CARRIERS; COHERENCE LENGTH; ELECTRIC POTENTIAL; ELECTRON-ELECTRON COUPLING; LAYERS; NANOSTRUCTURES; OXIDATION; SURFACES; TRAPPING

Citation Formats


                    Wang, Li-Xian, Yan, Yuan, Liao, Zhi-Min, Yu, Da-Peng, and Collaborative Innovation Center of Quantum Matter, Beijing. Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4907948.

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                    Wang, Li-Xian, Yan, Yuan, Liao, Zhi-Min, Yu, Da-Peng, & Collaborative Innovation Center of Quantum Matter, Beijing. Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons.  United States.  https://doi.org/10.1063/1.4907948

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                    Wang, Li-Xian, Yan, Yuan, Liao, Zhi-Min, Yu, Da-Peng, and Collaborative Innovation Center of Quantum Matter, Beijing. Mon .  
        "Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons".  United States.  https://doi.org/10.1063/1.4907948.

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@article{osti_22412620,

  title        = {Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons},

  author       = {Wang, Li-Xian and Yan, Yuan and Liao, Zhi-Min and Yu, Da-Peng and Collaborative Innovation Center of Quantum Matter, Beijing},

  abstractNote = {We report a gate-voltage modulation on the weak anti-localization of individual topological insulator Bi{sub 2}Se{sub 3} nanoribbons. The phase coherence length decreases with decreasing the carrier density of the surface states on the bottom surface of the Bi{sub 2}Se{sub 3} nanoribbon as tuning the gate voltage from 0 to −100 V, indicating that the electron-electron interaction dominates the decoherence at low carrier density. Furthermore, we observe an abnormal conductance decline at positive gate voltage regime, which is ascribed to the capture of surface carriers by the trapping centers in the surface oxidation layer.},

  doi          = {10.1063/1.4907948},

  url          = {https://www.osti.gov/biblio/22412620},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 6,

  volume       = 106,

  place        = {United States},

  year         = {2015},

  month        = {2}

}

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