skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Determination of band diagram for a p-n junction between Mott insulator LaMnO{sub 3} and band insulator Nb:SrTiO{sub 3}

Abstract

The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with “p-type carriers” LaMnO{sub 3} and the n-type semiconductor Nb-doped SrTiO{sub 3} (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. % to 1.0 at. %, the value of the built-in potential for the Nb:STO side (V{sub bn}) is reduced from 0.55 ± 0.05 eV to 0.25 ± 0.05 eV. The modulation of V{sub bn} is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

Authors:
 [1];  [2]; ; ; ;  [3]; ;  [4];  [1]
  1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)
  3. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)
  4. Insutitute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 227-8581 (Japan)
Publication Date:
OSTI Identifier:
22412598
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRONIC STRUCTURE; EPITAXY; EV RANGE; LANTHANUM COMPOUNDS; MANGANATES; MODULATION; NIOBIUM COMPOUNDS; N-TYPE CONDUCTORS; PHOTOELECTRON SPECTROSCOPY; P-N JUNCTIONS; POTENTIALS; P-TYPE CONDUCTORS; STRONTIUM TITANATES

Citation Formats

Kitamura, M., Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Kobayashi, M., Sakai, E., Horiba, K., Kumigashira, H., E-mail: hiroshi.kumigashira@kek.jp, Takahashi, R., Lippmaa, M., and Fujioka, H. Determination of band diagram for a p-n junction between Mott insulator LaMnO{sub 3} and band insulator Nb:SrTiO{sub 3}. United States: N. p., 2015. Web. doi:10.1063/1.4908570.
Kitamura, M., Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Kobayashi, M., Sakai, E., Horiba, K., Kumigashira, H., E-mail: hiroshi.kumigashira@kek.jp, Takahashi, R., Lippmaa, M., & Fujioka, H. Determination of band diagram for a p-n junction between Mott insulator LaMnO{sub 3} and band insulator Nb:SrTiO{sub 3}. United States. doi:10.1063/1.4908570.
Kitamura, M., Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Kobayashi, M., Sakai, E., Horiba, K., Kumigashira, H., E-mail: hiroshi.kumigashira@kek.jp, Takahashi, R., Lippmaa, M., and Fujioka, H. Mon . "Determination of band diagram for a p-n junction between Mott insulator LaMnO{sub 3} and band insulator Nb:SrTiO{sub 3}". United States. doi:10.1063/1.4908570.
@article{osti_22412598,
title = {Determination of band diagram for a p-n junction between Mott insulator LaMnO{sub 3} and band insulator Nb:SrTiO{sub 3}},
author = {Kitamura, M. and Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization and Kobayashi, M. and Sakai, E. and Horiba, K. and Kumigashira, H., E-mail: hiroshi.kumigashira@kek.jp and Takahashi, R. and Lippmaa, M. and Fujioka, H.},
abstractNote = {The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with “p-type carriers” LaMnO{sub 3} and the n-type semiconductor Nb-doped SrTiO{sub 3} (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. % to 1.0 at. %, the value of the built-in potential for the Nb:STO side (V{sub bn}) is reduced from 0.55 ± 0.05 eV to 0.25 ± 0.05 eV. The modulation of V{sub bn} is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.},
doi = {10.1063/1.4908570},
journal = {Applied Physics Letters},
number = 6,
volume = 106,
place = {United States},
year = {Mon Feb 09 00:00:00 EST 2015},
month = {Mon Feb 09 00:00:00 EST 2015}
}