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Title: Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

Abstract

We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effectsmore » due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.« less

Authors:
; ; ;  [1]; ;  [2]
  1. Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland)
  2. University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)
Publication Date:
OSTI Identifier:
22410243
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; FILMS; FLOW RATE; GAS FLOW; PLASMA; POWDERS; POWER DENSITY; RADIOWAVE RADIATION; SILANES; SILICON; SUBSTRATES; TIME RESOLUTION; TRANSIENTS; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch, De Wolf, Stefaan, Demaurex, Bénédicte, Ballif, Christophe, Amanatides, Eleftherios, and Mataras, Dimitrios. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition. United States: N. p., 2015. Web. doi:10.1063/1.4921696.
Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch, De Wolf, Stefaan, Demaurex, Bénédicte, Ballif, Christophe, Amanatides, Eleftherios, & Mataras, Dimitrios. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition. United States. doi:10.1063/1.4921696.
Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch, De Wolf, Stefaan, Demaurex, Bénédicte, Ballif, Christophe, Amanatides, Eleftherios, and Mataras, Dimitrios. Thu . "Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition". United States. doi:10.1063/1.4921696.
@article{osti_22410243,
title = {Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition},
author = {Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch and De Wolf, Stefaan and Demaurex, Bénédicte and Ballif, Christophe and Amanatides, Eleftherios and Mataras, Dimitrios},
abstractNote = {We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.},
doi = {10.1063/1.4921696},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 20,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}