skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds

Abstract

The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge{sub 2}Sb{sub 2}Te{sub 5} and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.

Authors:
;  [1]
  1. Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22410234
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANTIMONY TELLURIDES; CUBIC LATTICES; ELECTRONIC STRUCTURE; GERMANIUM COMPOUNDS; HEXAGONAL LATTICES; PHASE CHANGE MATERIALS; PHASE TRANSFORMATIONS; SURFACES; TELLURIUM COMPOUNDS; TOPOLOGY

Citation Formats

Kim, Jeongwoo, and Jhi, Seung-Hoon, E-mail: jhish@postech.ac.kr. Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds. United States: N. p., 2015. Web. doi:10.1063/1.4921294.
Kim, Jeongwoo, & Jhi, Seung-Hoon, E-mail: jhish@postech.ac.kr. Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds. United States. doi:10.1063/1.4921294.
Kim, Jeongwoo, and Jhi, Seung-Hoon, E-mail: jhish@postech.ac.kr. Thu . "Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds". United States. doi:10.1063/1.4921294.
@article{osti_22410234,
title = {Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds},
author = {Kim, Jeongwoo and Jhi, Seung-Hoon, E-mail: jhish@postech.ac.kr},
abstractNote = {The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge{sub 2}Sb{sub 2}Te{sub 5} and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.},
doi = {10.1063/1.4921294},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 19,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}