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Title: Effects of aluminum on epitaxial graphene grown on C-face SiC

Abstract

The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 °C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 °C to 700 °C induces formation of an ordered compound, producing a two domain √7× √7R19° LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 °C, and at 1000 °C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 °C.

Authors:
; ; ;  [1];  [2]
  1. Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping S-58183 (Sweden)
  2. MAX-lab, Lund University, Lund S-22100 (Sweden)
Publication Date:
OSTI Identifier:
22410233
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ANNEALING; DECOMPOSITION; ELECTRON DIFFRACTION; EPITAXY; GRAPHENE; INTERFACES; LAYERS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SILICON CARBIDES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE

Citation Formats

Xia, Chao, E-mail: chaxi@ifm.liu.se, Johansson, Leif I., Hultman, Lars, Virojanadara, Chariya, and Niu, Yuran. Effects of aluminum on epitaxial graphene grown on C-face SiC. United States: N. p., 2015. Web. doi:10.1063/1.4921462.
Xia, Chao, E-mail: chaxi@ifm.liu.se, Johansson, Leif I., Hultman, Lars, Virojanadara, Chariya, & Niu, Yuran. Effects of aluminum on epitaxial graphene grown on C-face SiC. United States. doi:10.1063/1.4921462.
Xia, Chao, E-mail: chaxi@ifm.liu.se, Johansson, Leif I., Hultman, Lars, Virojanadara, Chariya, and Niu, Yuran. Thu . "Effects of aluminum on epitaxial graphene grown on C-face SiC". United States. doi:10.1063/1.4921462.
@article{osti_22410233,
title = {Effects of aluminum on epitaxial graphene grown on C-face SiC},
author = {Xia, Chao, E-mail: chaxi@ifm.liu.se and Johansson, Leif I. and Hultman, Lars and Virojanadara, Chariya and Niu, Yuran},
abstractNote = {The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 °C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 °C to 700 °C induces formation of an ordered compound, producing a two domain √7× √7R19° LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 °C, and at 1000 °C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 °C.},
doi = {10.1063/1.4921462},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 19,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}