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Title: Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

Abstract

The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

Authors:
 [1]; ;  [2];  [3];  [2]
  1. Powder and Ceramics Division, Korea Institute of Materials Science, Changwon, Gyeongnam 642-831 (Korea, Republic of)
  2. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22410223
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ELECTRONS; ENERGY DEPENDENCE; EXCITATION; INTERFACES; IRRADIATION; KEV RANGE; NICKEL; PALLADIUM; PLATINUM; PLATINUM SILICIDES; SILICON OXIDES; SOLIDS; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Lee, J.-G., E-mail: jglee36@kims.re.kr, Nagase, T., Yasuda, H., Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, and Mori, H. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation. United States: N. p., 2015. Web. doi:10.1063/1.4921429.
Lee, J.-G., E-mail: jglee36@kims.re.kr, Nagase, T., Yasuda, H., Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, & Mori, H. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation. United States. doi:10.1063/1.4921429.
Lee, J.-G., E-mail: jglee36@kims.re.kr, Nagase, T., Yasuda, H., Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, and Mori, H. Thu . "Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation". United States. doi:10.1063/1.4921429.
@article{osti_22410223,
title = {Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation},
author = {Lee, J.-G., E-mail: jglee36@kims.re.kr and Nagase, T. and Yasuda, H. and Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 and Mori, H.},
abstractNote = {The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.},
doi = {10.1063/1.4921429},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 19,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}