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Title: State diagram of an orthogonal spin transfer spin valve device

Abstract

We present the switching characteristics of a spin-transfer device that incorporates a perpendicularly magnetized spin-polarizing layer with an in-plane magnetized free and fixed magnetic layer, known as an orthogonal spin transfer spin valve device. This device shows clear switching between parallel (P) and antiparallel (AP) resistance states and the reverse transition (AP → P) for both current polarities. Further, hysteretic transitions are shown to occur into a state with a resistance intermediate between that of the P and AP states, again for both current polarities. These unusual spin-transfer switching characteristics can be explained within a simple macrospin model that incorporates thermal fluctuations and considers a spin-polarized current that is tilted with respect to the free layer's plane, due to the presence of the spin-transfer torque from the polarizing layer.

Authors:
; ; ; ;  [1]
  1. Department of Physics, New York University, New York, New York 10003 (United States)
Publication Date:
OSTI Identifier:
22410208
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; FLUCTUATIONS; LAYERS; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; PHASE DIAGRAMS; SPIN; SPIN ORIENTATION; TORQUE; VALVES

Citation Formats

Ye, Li, Wolf, Georg, Pinna, Daniele, Chaves-O'Flynn, Gabriel D., and Kent, Andrew D. State diagram of an orthogonal spin transfer spin valve device. United States: N. p., 2015. Web. doi:10.1063/1.4920991.
Ye, Li, Wolf, Georg, Pinna, Daniele, Chaves-O'Flynn, Gabriel D., & Kent, Andrew D. State diagram of an orthogonal spin transfer spin valve device. United States. doi:10.1063/1.4920991.
Ye, Li, Wolf, Georg, Pinna, Daniele, Chaves-O'Flynn, Gabriel D., and Kent, Andrew D. Thu . "State diagram of an orthogonal spin transfer spin valve device". United States. doi:10.1063/1.4920991.
@article{osti_22410208,
title = {State diagram of an orthogonal spin transfer spin valve device},
author = {Ye, Li and Wolf, Georg and Pinna, Daniele and Chaves-O'Flynn, Gabriel D. and Kent, Andrew D.},
abstractNote = {We present the switching characteristics of a spin-transfer device that incorporates a perpendicularly magnetized spin-polarizing layer with an in-plane magnetized free and fixed magnetic layer, known as an orthogonal spin transfer spin valve device. This device shows clear switching between parallel (P) and antiparallel (AP) resistance states and the reverse transition (AP → P) for both current polarities. Further, hysteretic transitions are shown to occur into a state with a resistance intermediate between that of the P and AP states, again for both current polarities. These unusual spin-transfer switching characteristics can be explained within a simple macrospin model that incorporates thermal fluctuations and considers a spin-polarized current that is tilted with respect to the free layer's plane, due to the presence of the spin-transfer torque from the polarizing layer.},
doi = {10.1063/1.4920991},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 19,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}