Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

Journal Article · Thu May 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4920995· OSTI ID:22410199

Park, Seoung-Hwan ^[1]; Pak, Y. Eugene; Park, Chang Young ^[2]; Mishra, Dhaneshwar; Yoo, Seung-Hyun ^[3]; Cho, Yong-Hee; Shim, Mun-Bo; Kim, Sungjin ^[4]

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1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongbuk 712-702 (Korea, Republic of)
2. Advanced Institutes of Convergence Technology, Seoul National University, Suwon (Korea, Republic of)
3. Department of Mechanical Engineering, Ajou University, Suwon (Korea, Republic of)
4. CAE Group, Platform Technology Lab, Samsung Advanced Institute of Technology, Samsung Street 130, Suwon, Kyeonggi-Do 443-803 (Korea, Republic of)

Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (θ < 40°) from c-plane, the AlInGaN/InGaN system is shown to have ∼3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

• OSTI ID: 22410199
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
FERMI LEVEL
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
MARKOV PROCESS
MATRIX ELEMENTS
OPTICAL MODELS
OPTICAL PROPERTIES
PERFORMANCE
POLARIZATION
QUANTUM WELLS
SUBSTRATES
VISIBLE RADIATION