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Title: Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire

Abstract

We report on the magnetoresistance (MR) and electron transport measurements observed on a single crystal magnetite nanowire prepared using a hydrothermal synthesis method. High-resolution electron microscopy revealed the single crystal magnetite nanowires with 80–120 nm thickness and up to 8 μm in length. Magnetic measurements showed the typical Verwey transition around 120 K with a 100 Oe room temperature coercivity and 45 emu/g saturation magnetization, which are comparable to bulk magnetite. Electrical resistance measurements in 5–300 K temperature range were performed by scanning gate voltage and varying applied magnetic field. Electrical resistivity of the nanowire was found to be around 5 × 10{sup −4} Ω m, slightly higher than the bulk and has activation energy of 0.07 eV. A negative MR of about 0.7% is observed for as-synthesized nanowires at 0.3 T applied field. MR scaled with increasing applied magnetic field representing the field-induced alignment of magnetic domain. These results are attributed to the spin-polarized electron transport across the antiphase boundaries, which implicate promising applications for nanowires in magnetoelectronics.

Authors:
; ;  [1];  [2]
  1. Department of Physics, Boise State University, Boise, Idaho 83725 (United States)
  2. School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)
Publication Date:
OSTI Identifier:
22410130
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; COERCIVE FORCE; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ELECTRON MICROSCOPY; FERRITES; HYDROTHERMAL SYNTHESIS; MAGNETIC FIELDS; MAGNETITE; MAGNETIZATION; MAGNETORESISTANCE; MONOCRYSTALS; NANOWIRES; PHASE TRANSFORMATIONS; SPIN ORIENTATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Reddy, K. M., E-mail: mrkongara@boisestate.edu, Punnoose, Alex, Hanna, Charles, and Padture, Nitin P. Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire. United States: N. p., 2015. Web. doi:10.1063/1.4914535.
Reddy, K. M., E-mail: mrkongara@boisestate.edu, Punnoose, Alex, Hanna, Charles, & Padture, Nitin P. Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire. United States. doi:10.1063/1.4914535.
Reddy, K. M., E-mail: mrkongara@boisestate.edu, Punnoose, Alex, Hanna, Charles, and Padture, Nitin P. Thu . "Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire". United States. doi:10.1063/1.4914535.
@article{osti_22410130,
title = {Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire},
author = {Reddy, K. M., E-mail: mrkongara@boisestate.edu and Punnoose, Alex and Hanna, Charles and Padture, Nitin P.},
abstractNote = {We report on the magnetoresistance (MR) and electron transport measurements observed on a single crystal magnetite nanowire prepared using a hydrothermal synthesis method. High-resolution electron microscopy revealed the single crystal magnetite nanowires with 80–120 nm thickness and up to 8 μm in length. Magnetic measurements showed the typical Verwey transition around 120 K with a 100 Oe room temperature coercivity and 45 emu/g saturation magnetization, which are comparable to bulk magnetite. Electrical resistance measurements in 5–300 K temperature range were performed by scanning gate voltage and varying applied magnetic field. Electrical resistivity of the nanowire was found to be around 5 × 10{sup −4} Ω m, slightly higher than the bulk and has activation energy of 0.07 eV. A negative MR of about 0.7% is observed for as-synthesized nanowires at 0.3 T applied field. MR scaled with increasing applied magnetic field representing the field-induced alignment of magnetic domain. These results are attributed to the spin-polarized electron transport across the antiphase boundaries, which implicate promising applications for nanowires in magnetoelectronics.},
doi = {10.1063/1.4914535},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}