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Title: Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Abstract

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

Authors:
; ;  [1]
  1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22410102
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COBALT COMPOUNDS; COMPARATIVE EVALUATIONS; DIAMONDS; ELECTRIC CONTACTS; FILMS; HETEROJUNCTIONS; INTERFACES; ION BEAMS; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE SILICIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPIN; SPUTTERING; TEMPERATURE DEPENDENCE

Citation Formats

Nishiwaki, M., Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp, and Asano, H. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering. United States: N. p., 2015. Web. doi:10.1063/1.4917466.
Nishiwaki, M., Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp, & Asano, H. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering. United States. doi:10.1063/1.4917466.
Nishiwaki, M., Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp, and Asano, H. Thu . "Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering". United States. doi:10.1063/1.4917466.
@article{osti_22410102,
title = {Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering},
author = {Nishiwaki, M. and Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp and Asano, H.},
abstractNote = {High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.},
doi = {10.1063/1.4917466},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}