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Title: Fabrication of MgAl{sub 2}O{sub 4} tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe{sub 4}N ferromagnetic electrode

Abstract

Spinel MgAl{sub 2}O{sub 4} thin films were deposited on MgO single-crystal substrates and epitaxial Fe (or Fe{sub 4}N) thin films by RF-sputtering from a ceramic target. Epitaxial relationship was confirmed by X-ray diffraction analysis between the crystalline spinel MgAl{sub 2}O{sub 4} films and the respective substrate and underlayers, while no diffraction peak was observed from the films deposited on amorphous substrates. Spin-valve type magnetic tunnel junctions (MTJs) with a stacking structure of Fe [Fe{sub 4}N]/MgAl{sub 2}O{sub 4}/CoFeB/Ru/Fe/MnIr exhibited normal [inverse] tunnel magnetoresistance (TMR) effect, reflecting the sign of spin polarization of Fe [Fe{sub 4}N]. The maximum magnitude of the TMR ratio obtained for the Fe-based and Fe{sub 4}N-based MTJs was 67% and 18%, respectively. The resistance area product values of the MTJs were significantly larger than the reported values for the MTJs with a post-oxidized spinel MgAl{sub 2}O{sub 4} barrier.

Authors:
; ;  [1]
  1. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05 Aobayama, Sendai 980-8579 (Japan)
Publication Date:
OSTI Identifier:
22410090
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; CERAMICS; EPITAXY; INTERFACES; IRON NITRIDES; MAGNESIUM OXIDES; MAGNETORESISTANCE; MONOCRYSTALS; RADIOWAVE RADIATION; SPIN ORIENTATION; SPINELS; SPUTTERING; SUBSTRATES; THIN FILMS; TUNNEL EFFECT; X-RAY DIFFRACTION

Citation Formats

Tsunoda, Masakiyo, Chiba, Ryoichi, and Kabara, Kazuki. Fabrication of MgAl{sub 2}O{sub 4} tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe{sub 4}N ferromagnetic electrode. United States: N. p., 2015. Web. doi:10.1063/1.4906762.
Tsunoda, Masakiyo, Chiba, Ryoichi, & Kabara, Kazuki. Fabrication of MgAl{sub 2}O{sub 4} tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe{sub 4}N ferromagnetic electrode. United States. doi:10.1063/1.4906762.
Tsunoda, Masakiyo, Chiba, Ryoichi, and Kabara, Kazuki. Thu . "Fabrication of MgAl{sub 2}O{sub 4} tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe{sub 4}N ferromagnetic electrode". United States. doi:10.1063/1.4906762.
@article{osti_22410090,
title = {Fabrication of MgAl{sub 2}O{sub 4} tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe{sub 4}N ferromagnetic electrode},
author = {Tsunoda, Masakiyo and Chiba, Ryoichi and Kabara, Kazuki},
abstractNote = {Spinel MgAl{sub 2}O{sub 4} thin films were deposited on MgO single-crystal substrates and epitaxial Fe (or Fe{sub 4}N) thin films by RF-sputtering from a ceramic target. Epitaxial relationship was confirmed by X-ray diffraction analysis between the crystalline spinel MgAl{sub 2}O{sub 4} films and the respective substrate and underlayers, while no diffraction peak was observed from the films deposited on amorphous substrates. Spin-valve type magnetic tunnel junctions (MTJs) with a stacking structure of Fe [Fe{sub 4}N]/MgAl{sub 2}O{sub 4}/CoFeB/Ru/Fe/MnIr exhibited normal [inverse] tunnel magnetoresistance (TMR) effect, reflecting the sign of spin polarization of Fe [Fe{sub 4}N]. The maximum magnitude of the TMR ratio obtained for the Fe-based and Fe{sub 4}N-based MTJs was 67% and 18%, respectively. The resistance area product values of the MTJs were significantly larger than the reported values for the MTJs with a post-oxidized spinel MgAl{sub 2}O{sub 4} barrier.},
doi = {10.1063/1.4906762},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}