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Title: Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact

Abstract

We successfully fabricate a (100)-orientated B2-type-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5} (CFSA)/MgO/Si(100) tunnel contact that is promising for an efficient spin injector for Si channels. The MgO barrier is formed by radical oxidation of an Mg thin film deposited on a Si(100) surface at room temperature and successive radical oxygen annealing at 400 °C. The CFSA electrode is grown on the MgO barrier at 400 °C by ultrahigh-vacuum molecular beam deposition, and it exhibits a (100)-orientated columnar polycrystalline structure with a high degree (63%) of B2-order. The MgO barrier near the interface of the CFSA/MgO junction is crystallized with the (100) orientation, i.e., the spin filter effect due to the MgO barrier could be expected for this junction. A three-terminal Si-channel spin-accumulation device with a CFSA/MgO/Si(100) spin injector is fabricated, and the Hanle effect of accumulated spin polarized electrons injected from this contact to the Si channel is observed.

Authors:
; ; ;  [1];  [2]
  1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa (Japan)
  2. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan)
Publication Date:
OSTI Identifier:
22410074
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ANNEALING; COBALT COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRIC CONTACTS; FABRICATION; HETEROJUNCTIONS; INTERFACES; IRON SILICIDES; MAGNESIUM OXIDES; OXIDATION; POLYCRYSTALS; SEMICONDUCTOR JUNCTIONS; SILICON; SPIN ORIENTATION; SURFACES; THIN FILMS; TUNNEL EFFECT

Citation Formats

Kawame, Yu, E-mail: kawame-y@isl.titech.ac.jp, Akushichi, Taiju, Shuto, Yusuke, Sugahara, Satoshi, E-mail: sugahara@isl.titech.ac.jp, and Takamura, Yota. Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact. United States: N. p., 2015. Web. doi:10.1063/1.4918567.
Kawame, Yu, E-mail: kawame-y@isl.titech.ac.jp, Akushichi, Taiju, Shuto, Yusuke, Sugahara, Satoshi, E-mail: sugahara@isl.titech.ac.jp, & Takamura, Yota. Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact. United States. doi:10.1063/1.4918567.
Kawame, Yu, E-mail: kawame-y@isl.titech.ac.jp, Akushichi, Taiju, Shuto, Yusuke, Sugahara, Satoshi, E-mail: sugahara@isl.titech.ac.jp, and Takamura, Yota. Thu . "Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact". United States. doi:10.1063/1.4918567.
@article{osti_22410074,
title = {Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact},
author = {Kawame, Yu, E-mail: kawame-y@isl.titech.ac.jp and Akushichi, Taiju and Shuto, Yusuke and Sugahara, Satoshi, E-mail: sugahara@isl.titech.ac.jp and Takamura, Yota},
abstractNote = {We successfully fabricate a (100)-orientated B2-type-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5} (CFSA)/MgO/Si(100) tunnel contact that is promising for an efficient spin injector for Si channels. The MgO barrier is formed by radical oxidation of an Mg thin film deposited on a Si(100) surface at room temperature and successive radical oxygen annealing at 400 °C. The CFSA electrode is grown on the MgO barrier at 400 °C by ultrahigh-vacuum molecular beam deposition, and it exhibits a (100)-orientated columnar polycrystalline structure with a high degree (63%) of B2-order. The MgO barrier near the interface of the CFSA/MgO junction is crystallized with the (100) orientation, i.e., the spin filter effect due to the MgO barrier could be expected for this junction. A three-terminal Si-channel spin-accumulation device with a CFSA/MgO/Si(100) spin injector is fabricated, and the Hanle effect of accumulated spin polarized electrons injected from this contact to the Si channel is observed.},
doi = {10.1063/1.4918567},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}