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Title: Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films

Abstract

In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

Authors:
 [1];  [2]; ; ; ;  [3]; ;  [1];  [1];  [4]
  1. Department of Electronics, University of York, York YO10 5DD (United Kingdom)
  2. (Saudi Arabia)
  3. Department of Physics, University of York, York YO10 5DD (United Kingdom)
  4. (Japan)
Publication Date:
OSTI Identifier:
22410064
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM SILICIDES; ANNEALING; COBALT COMPOUNDS; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; HEUSLER ALLOYS; IRON COMPOUNDS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS

Citation Formats

Alhuwaymel, Tariq F., National Nanotechnology Center, KACST, Riyadh, Carpenter, Robert, Yu, Chris Nga Tung, Kuerbanjiang, Balati, Lazarov, Vlado K., Abdullah, Ranjdar M., El-Gomati, Mohamed, Hirohata, Atsufumi, E-mail: atsufumi.hirohata@york.ac.uk, and PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012. Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films. United States: N. p., 2015. Web. doi:10.1063/1.4916817.
Alhuwaymel, Tariq F., National Nanotechnology Center, KACST, Riyadh, Carpenter, Robert, Yu, Chris Nga Tung, Kuerbanjiang, Balati, Lazarov, Vlado K., Abdullah, Ranjdar M., El-Gomati, Mohamed, Hirohata, Atsufumi, E-mail: atsufumi.hirohata@york.ac.uk, & PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012. Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films. United States. doi:10.1063/1.4916817.
Alhuwaymel, Tariq F., National Nanotechnology Center, KACST, Riyadh, Carpenter, Robert, Yu, Chris Nga Tung, Kuerbanjiang, Balati, Lazarov, Vlado K., Abdullah, Ranjdar M., El-Gomati, Mohamed, Hirohata, Atsufumi, E-mail: atsufumi.hirohata@york.ac.uk, and PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012. Thu . "Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films". United States. doi:10.1063/1.4916817.
@article{osti_22410064,
title = {Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films},
author = {Alhuwaymel, Tariq F. and National Nanotechnology Center, KACST, Riyadh and Carpenter, Robert and Yu, Chris Nga Tung and Kuerbanjiang, Balati and Lazarov, Vlado K. and Abdullah, Ranjdar M. and El-Gomati, Mohamed and Hirohata, Atsufumi, E-mail: atsufumi.hirohata@york.ac.uk and PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012},
abstractNote = {In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.},
doi = {10.1063/1.4916817},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}