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Title: Quantum anomalous Hall effect in topological insulator memory

Abstract

We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.

Authors:
 [1];  [2];  [3];  [2];  [3];  [2]
  1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 (Singapore)
  2. (Singapore)
  3. Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore)
Publication Date:
OSTI Identifier:
22410038
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; DOPED MATERIALS; HALL EFFECT; HAMILTONIANS; L-S COUPLING; QUANTIZATION; READOUT SYSTEMS; THREE-DIMENSIONAL CALCULATIONS; THREE-DIMENSIONAL LATTICES; TOPOLOGY

Citation Formats

Jalil, Mansoor B. A., E-mail: elembaj@nus.edu.sg, Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608, Tan, S. G., Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576, Siu, Z. B., and NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore. Quantum anomalous Hall effect in topological insulator memory. United States: N. p., 2015. Web. doi:10.1063/1.4916999.
Jalil, Mansoor B. A., E-mail: elembaj@nus.edu.sg, Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608, Tan, S. G., Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576, Siu, Z. B., & NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore. Quantum anomalous Hall effect in topological insulator memory. United States. doi:10.1063/1.4916999.
Jalil, Mansoor B. A., E-mail: elembaj@nus.edu.sg, Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608, Tan, S. G., Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576, Siu, Z. B., and NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore. Thu . "Quantum anomalous Hall effect in topological insulator memory". United States. doi:10.1063/1.4916999.
@article{osti_22410038,
title = {Quantum anomalous Hall effect in topological insulator memory},
author = {Jalil, Mansoor B. A., E-mail: elembaj@nus.edu.sg and Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 and Tan, S. G. and Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 and Siu, Z. B. and NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore},
abstractNote = {We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.},
doi = {10.1063/1.4916999},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}