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Title: Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer

Abstract

We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112{sup ¯}0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.

Authors:
;  [1];  [2]; ; ;  [1]
  1. National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22410008
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; COBALT BASE ALLOYS; CRYSTAL STRUCTURE; EPITAXY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GERMANIUM ALLOYS; HEUSLER ALLOYS; INTERMETALLIC COMPOUNDS; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MONOCRYSTALS; NICKEL; ORIENTATION; SAPPHIRE; SPACERS; SUBSTRATES

Citation Formats

Chen, Jiamin, Hono, K., E-mail: kazuhiro.hono@nims.go.jp, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047, Furubayashi, T., Takahashi, Y. K., and Sasaki, T. T. Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer. United States: N. p., 2015. Web. doi:10.1063/1.4915481.
Chen, Jiamin, Hono, K., E-mail: kazuhiro.hono@nims.go.jp, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047, Furubayashi, T., Takahashi, Y. K., & Sasaki, T. T. Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer. United States. doi:10.1063/1.4915481.
Chen, Jiamin, Hono, K., E-mail: kazuhiro.hono@nims.go.jp, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047, Furubayashi, T., Takahashi, Y. K., and Sasaki, T. T. Thu . "Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer". United States. doi:10.1063/1.4915481.
@article{osti_22410008,
title = {Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer},
author = {Chen, Jiamin and Hono, K., E-mail: kazuhiro.hono@nims.go.jp and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047 and Furubayashi, T. and Takahashi, Y. K. and Sasaki, T. T.},
abstractNote = {We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112{sup ¯}0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.},
doi = {10.1063/1.4915481},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}