skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films

Abstract

Magnetic and electrical transport properties of fluorine-ion-beam irradiated GaMnAs films were studied as a function of ion fluence and energy of impinging ions. The different nature of defects created by ions of low- and high-energies is explored in this work by means of transport and magnetization measurements. Our results show that the saturation magnetization of the irradiated samples is suppressed as the ion fluence is increased. Interestingly, however, the same effect is not observed in the case of critical temperature, which remains nearly the same for irradiated and non-irradiated samples measured by superconducting quantum interference device. Magnetotransport measurements appear to provide more reliable results regarding the critical temperature, since they are consistent with the ion-irradiation-induced disorder in the GaMnAs film, quantified here as the increase of the resistivity. We discuss this behavior based on the inhomogeneity of damages caused by the irradiation process.

Authors:
 [1];  [2]; ;  [1]; ; ;  [3];  [3];  [4]
  1. Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, 21941-972 RJ (Brazil)
  2. (United States)
  3. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22409993
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRITICAL TEMPERATURE; CRYSTAL DEFECTS; ENERGY DEPENDENCE; FILMS; FLUORINE IONS; GALLIUM COMPOUNDS; ION BEAMS; IRRADIATION; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE ARSENIDES; PHYSICAL RADIATION EFFECTS; SQUID DEVICES

Citation Formats

Mello, S. L. A., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Sant'Anna, M. M., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Codeço, C. F. S., Dong, S. N., Liu, X., Furdyna, J. K., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Yoo, T., and Physics Department, Korea University, Seoul 136-701. Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films. United States: N. p., 2015. Web. doi:10.1063/1.4917512.
Mello, S. L. A., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Sant'Anna, M. M., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Codeço, C. F. S., Dong, S. N., Liu, X., Furdyna, J. K., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Yoo, T., & Physics Department, Korea University, Seoul 136-701. Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films. United States. doi:10.1063/1.4917512.
Mello, S. L. A., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Sant'Anna, M. M., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Codeço, C. F. S., Dong, S. N., Liu, X., Furdyna, J. K., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu, Yoo, T., and Physics Department, Korea University, Seoul 136-701. Thu . "Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films". United States. doi:10.1063/1.4917512.
@article{osti_22409993,
title = {Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films},
author = {Mello, S. L. A., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu and Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Sant'Anna, M. M., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu and Codeço, C. F. S. and Dong, S. N. and Liu, X. and Furdyna, J. K., E-mail: smello@nd.edu, E-mail: mms@if.ufrj.br, E-mail: furdyna@nd.edu and Yoo, T. and Physics Department, Korea University, Seoul 136-701},
abstractNote = {Magnetic and electrical transport properties of fluorine-ion-beam irradiated GaMnAs films were studied as a function of ion fluence and energy of impinging ions. The different nature of defects created by ions of low- and high-energies is explored in this work by means of transport and magnetization measurements. Our results show that the saturation magnetization of the irradiated samples is suppressed as the ion fluence is increased. Interestingly, however, the same effect is not observed in the case of critical temperature, which remains nearly the same for irradiated and non-irradiated samples measured by superconducting quantum interference device. Magnetotransport measurements appear to provide more reliable results regarding the critical temperature, since they are consistent with the ion-irradiation-induced disorder in the GaMnAs film, quantified here as the increase of the resistivity. We discuss this behavior based on the inhomogeneity of damages caused by the irradiation process.},
doi = {10.1063/1.4917512},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}