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Title: Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

Abstract

The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb{sup 3+}, Tm{sup 3+}, Sm{sup 3+}, and Ho{sup 3+} ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr{sup 3+} and Fe{sup 3+} impurities. The samples 5 × 5 mm{sup 2} were positioned in the classical straws and within an estimated accuracy of 10{sup −6 }emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb{sup 3+} ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

Authors:
; ;  [1]; ; ; ;  [2];  [3];  [4];  [3]; ;  [5];  [6];  [7];  [4]
  1. Institute of Physics of ASCR v.v.i., Cukrovarnická 10, 162 00 Prague 6 (Czech Republic)
  2. Department of Inorganic Chemistry, Institute of Chemical Technology, 166 28 Prague 6 (Czech Republic)
  3. Peter Grünberg Institut, PGI-9, Forschung Centrum, Jülich D-52425 (Germany)
  4. (Germany)
  5. Nuclear Physics Institute of the ASCR v.v.i., 250 68 Řež (Czech Republic)
  6. (Czech Republic)
  7. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden (Germany)
Publication Date:
OSTI Identifier:
22409992
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHROMIUM IONS; CURIE-WEISS LAW; ELECTRON SPIN RESONANCE; FILMS; GALLIUM NITRIDES; HOLMIUM IONS; IRON IONS; MAGNETIC FIELDS; MAGNETIZATION; ORGANOMETALLIC COMPOUNDS; PARAMAGNETISM; SAMARIUM IONS; SAPPHIRE; SQUID DEVICES; SUBSTRATES; TERBIUM IONS; THULIUM IONS; VAPOR PHASE EPITAXY

Citation Formats

Maryško, M., E-mail: marysko@fzu.cz, Hejtmánek, J., Laguta, V., Sofer, Z., Sedmidubský, D., Šimek, P., Veselý, M., Mikulics, M., JARA, Fundamentals of Future Information Technology, D52425 Jülich, Buchal, C., Macková, A., Malínský, P., Department of Physics, Faculty of Science, J.E.Purkinje University, České mládeže, 400 96 Ústí nad Labem, Wilhelm, R. A., and Technische Universität Dresden, 01062 Dresden. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films. United States: N. p., 2015. Web. doi:10.1063/1.4916761.
Maryško, M., E-mail: marysko@fzu.cz, Hejtmánek, J., Laguta, V., Sofer, Z., Sedmidubský, D., Šimek, P., Veselý, M., Mikulics, M., JARA, Fundamentals of Future Information Technology, D52425 Jülich, Buchal, C., Macková, A., Malínský, P., Department of Physics, Faculty of Science, J.E.Purkinje University, České mládeže, 400 96 Ústí nad Labem, Wilhelm, R. A., & Technische Universität Dresden, 01062 Dresden. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films. United States. doi:10.1063/1.4916761.
Maryško, M., E-mail: marysko@fzu.cz, Hejtmánek, J., Laguta, V., Sofer, Z., Sedmidubský, D., Šimek, P., Veselý, M., Mikulics, M., JARA, Fundamentals of Future Information Technology, D52425 Jülich, Buchal, C., Macková, A., Malínský, P., Department of Physics, Faculty of Science, J.E.Purkinje University, České mládeže, 400 96 Ústí nad Labem, Wilhelm, R. A., and Technische Universität Dresden, 01062 Dresden. Thu . "Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films". United States. doi:10.1063/1.4916761.
@article{osti_22409992,
title = {Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films},
author = {Maryško, M., E-mail: marysko@fzu.cz and Hejtmánek, J. and Laguta, V. and Sofer, Z. and Sedmidubský, D. and Šimek, P. and Veselý, M. and Mikulics, M. and JARA, Fundamentals of Future Information Technology, D52425 Jülich and Buchal, C. and Macková, A. and Malínský, P. and Department of Physics, Faculty of Science, J.E.Purkinje University, České mládeže, 400 96 Ústí nad Labem and Wilhelm, R. A. and Technische Universität Dresden, 01062 Dresden},
abstractNote = {The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb{sup 3+}, Tm{sup 3+}, Sm{sup 3+}, and Ho{sup 3+} ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr{sup 3+} and Fe{sup 3+} impurities. The samples 5 × 5 mm{sup 2} were positioned in the classical straws and within an estimated accuracy of 10{sup −6 }emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb{sup 3+} ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.},
doi = {10.1063/1.4916761},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}