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Title: Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

Abstract

In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

Authors:
; ; ;  [1];  [2]
  1. Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China)
  2. Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
Publication Date:
OSTI Identifier:
22409987
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COPPER IONS; COPPER OXIDES; CUBIC LATTICES; DOPED MATERIALS; FERROMAGNETISM; MAGNETIC PROPERTIES; MAGNETIZATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Hu, Yu-Min, E-mail: ymhu@nuk.edu.tw, Kuang, Chein-Hsiun, Han, Tai-Chun, Yu, Chin-Chung, and Li, Sih-Sian. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films. United States: N. p., 2015. Web. doi:10.1063/1.4906527.
Hu, Yu-Min, E-mail: ymhu@nuk.edu.tw, Kuang, Chein-Hsiun, Han, Tai-Chun, Yu, Chin-Chung, & Li, Sih-Sian. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films. United States. doi:10.1063/1.4906527.
Hu, Yu-Min, E-mail: ymhu@nuk.edu.tw, Kuang, Chein-Hsiun, Han, Tai-Chun, Yu, Chin-Chung, and Li, Sih-Sian. Thu . "Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films". United States. doi:10.1063/1.4906527.
@article{osti_22409987,
title = {Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films},
author = {Hu, Yu-Min, E-mail: ymhu@nuk.edu.tw and Kuang, Chein-Hsiun and Han, Tai-Chun and Yu, Chin-Chung and Li, Sih-Sian},
abstractNote = {In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.},
doi = {10.1063/1.4906527},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}