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Title: Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

Abstract

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.

Authors:
; ;  [1];  [2]
  1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama (Japan)
  2. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan)
Publication Date:
OSTI Identifier:
22409967
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ANNEALING; MAGNESIUM; MAGNESIUM OXIDES; OXIDATION; OXYGEN; SILICON; SPIN; SUBSTRATES; THIN FILMS; TRAPS

Citation Formats

Akushichi, T., E-mail: taiju.aku7@isl.titech.ac.jp, Shuto, Y., Sugahara, S., E-mail: sugahara@isl.titech.ac.jp, and Takamura, Y. Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing. United States: N. p., 2015. Web. doi:10.1063/1.4919270.
Akushichi, T., E-mail: taiju.aku7@isl.titech.ac.jp, Shuto, Y., Sugahara, S., E-mail: sugahara@isl.titech.ac.jp, & Takamura, Y. Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing. United States. doi:10.1063/1.4919270.
Akushichi, T., E-mail: taiju.aku7@isl.titech.ac.jp, Shuto, Y., Sugahara, S., E-mail: sugahara@isl.titech.ac.jp, and Takamura, Y. Thu . "Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing". United States. doi:10.1063/1.4919270.
@article{osti_22409967,
title = {Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing},
author = {Akushichi, T., E-mail: taiju.aku7@isl.titech.ac.jp and Shuto, Y. and Sugahara, S., E-mail: sugahara@isl.titech.ac.jp and Takamura, Y.},
abstractNote = {We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.},
doi = {10.1063/1.4919270},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}