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Title: Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method

Abstract

Superlattice-like (SLL) SnSb{sub 4}/Ga{sub 3}Sb{sub 7} (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]{sub 7} thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property.

Authors:
 [1];  [2];  [1];  [3]; ;  [4]
  1. Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, No. 4800 Caoan Highway, Shanghai 201804 (China)
  2. (China)
  3. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)
  4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22403016
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTRA; ANNEALING; ELECTRIC CONDUCTIVITY; GALLIUM ANTIMONIDES; MICROSTRUCTURE; NANOSTRUCTURES; RELIABILITY; SPECTROPHOTOMETRY; SUPERLATTICES; THERMODYNAMIC PROPERTIES; THIN FILMS; TIN COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION

Citation Formats

Hu, Yifeng, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, Zhai, Jiwei, E-mail: apzhai@tongji.edu, Zeng, Huarong, Song, Sannian, and Song, Zhitang. Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method. United States: N. p., 2015. Web. doi:10.1063/1.4919755.
Hu, Yifeng, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, Zhai, Jiwei, E-mail: apzhai@tongji.edu, Zeng, Huarong, Song, Sannian, & Song, Zhitang. Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method. United States. doi:10.1063/1.4919755.
Hu, Yifeng, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, Zhai, Jiwei, E-mail: apzhai@tongji.edu, Zeng, Huarong, Song, Sannian, and Song, Zhitang. Thu . "Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method". United States. doi:10.1063/1.4919755.
@article{osti_22403016,
title = {Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method},
author = {Hu, Yifeng and School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001 and Zhai, Jiwei, E-mail: apzhai@tongji.edu and Zeng, Huarong and Song, Sannian and Song, Zhitang},
abstractNote = {Superlattice-like (SLL) SnSb{sub 4}/Ga{sub 3}Sb{sub 7} (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]{sub 7} thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property.},
doi = {10.1063/1.4919755},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}