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Title: Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

Abstract

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

Authors:
; ; ; ; ; ; ;  [1]
  1. Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)
Publication Date:
OSTI Identifier:
22403012
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; LIQUID PHASE EPITAXY; NANOCOMPOSITES; NANOSTRUCTURES; PHONONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Wutzler, Rene, E-mail: r.wutzler@hzdr.de, Rebohle, Lars, Prucnal, Slawomir, Bregolin, Felipe L., Hübner, Rene, Voelskow, Matthias, Helm, Manfred, and Skorupa, Wolfgang. Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing. United States: N. p., 2015. Web. doi:10.1063/1.4919775.
Wutzler, Rene, E-mail: r.wutzler@hzdr.de, Rebohle, Lars, Prucnal, Slawomir, Bregolin, Felipe L., Hübner, Rene, Voelskow, Matthias, Helm, Manfred, & Skorupa, Wolfgang. Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing. United States. doi:10.1063/1.4919775.
Wutzler, Rene, E-mail: r.wutzler@hzdr.de, Rebohle, Lars, Prucnal, Slawomir, Bregolin, Felipe L., Hübner, Rene, Voelskow, Matthias, Helm, Manfred, and Skorupa, Wolfgang. Thu . "Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing". United States. doi:10.1063/1.4919775.
@article{osti_22403012,
title = {Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing},
author = {Wutzler, Rene, E-mail: r.wutzler@hzdr.de and Rebohle, Lars and Prucnal, Slawomir and Bregolin, Felipe L. and Hübner, Rene and Voelskow, Matthias and Helm, Manfred and Skorupa, Wolfgang},
abstractNote = {The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.},
doi = {10.1063/1.4919775},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}