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Title: Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

Abstract

The basic reason for enhanced electron capture time, τ{sub c}, of the oxide single trap dependence on drain current in the linear operation regime of p{sup +}-p-p{sup +} silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ{sub c} slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n{sup +}-p-n{sup +} FETs, the experimentally observed slope of τ{sub c} equals (−1). On the contrary, for the case of p{sup +}-p-p{sup +} Si FETs in the accumulation regime, the experimentally observed slope of τ{sub c} equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.

Authors:
 [1];  [2]; ;  [1]
  1. Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich (Germany)
  2. (Armenia)
Publication Date:
OSTI Identifier:
22403001
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLIFICATION; CONCENTRATION RATIO; CRITICAL FIELD; CROSS SECTIONS; ELECTRIC CURRENTS; ELECTRON CAPTURE; ELECTRONS; FIELD EFFECT TRANSISTORS; INTERFACES; LAYERS; LIQUIDS; NANOWIRES; OXIDES; PHOSPHORUS IONS; POTENTIALS; QUANTIZATION; QUANTUM MECHANICS; SILICON; TRAPS; TUNNEL EFFECT

Citation Formats

Gasparyan, F., Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan, Zadorozhnyi, I., and Vitusevich, S., E-mail: s.vitusevich@fz-juelich.de. Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current. United States: N. p., 2015. Web. doi:10.1063/1.4919816.
Gasparyan, F., Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan, Zadorozhnyi, I., & Vitusevich, S., E-mail: s.vitusevich@fz-juelich.de. Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current. United States. doi:10.1063/1.4919816.
Gasparyan, F., Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan, Zadorozhnyi, I., and Vitusevich, S., E-mail: s.vitusevich@fz-juelich.de. Thu . "Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current". United States. doi:10.1063/1.4919816.
@article{osti_22403001,
title = {Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current},
author = {Gasparyan, F. and Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan and Zadorozhnyi, I. and Vitusevich, S., E-mail: s.vitusevich@fz-juelich.de},
abstractNote = {The basic reason for enhanced electron capture time, τ{sub c}, of the oxide single trap dependence on drain current in the linear operation regime of p{sup +}-p-p{sup +} silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ{sub c} slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n{sup +}-p-n{sup +} FETs, the experimentally observed slope of τ{sub c} equals (−1). On the contrary, for the case of p{sup +}-p-p{sup +} Si FETs in the accumulation regime, the experimentally observed slope of τ{sub c} equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.},
doi = {10.1063/1.4919816},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}