Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4919820· OSTI ID:22402999

Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong ^[1]

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1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

• OSTI ID: 22402999
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
AUGER ELECTRON SPECTROSCOPY
CARBON
CHEMICAL VAPOR DEPOSITION
MAGNETORESISTANCE
RAMAN SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY