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Title: Strong localization induced anomalous temperature dependence exciton emission above 300 K from SnO{sub 2} quantum dots

Abstract

SnO{sub 2} quantum dots (QDs) are potential materials for deep ultraviolet (DUV) light emitting devices. In this study, we report the temperature and excitation power-dependent exciton luminescence from SnO{sub 2} QDs. The exciton emission exhibits anomalous blue shift, accompanied with band width reduction with increasing temperature and excitation power above 300 K. The anomalous temperature dependences of the peak energy and band width are well interpreted by the strongly localized carrier thermal hopping process and Gaussian shape of band tails states, respectively. The localized wells and band tails at conduction minimum are considered to be induced by the surface oxygen defects and local potential fluctuation in SnO{sub 2} QDs.

Authors:
; ; ; ;  [1];  [1];  [2]
  1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22402973
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EMISSION SPECTRA; EXCITATION; EXCITONS; FLUCTUATIONS; LUMINESCENCE; POTENTIALS; QUANTUM DOTS; SURFACES; TEMPERATURE DEPENDENCE; TIN OXIDES; ULTRAVIOLET RADIATION

Citation Formats

Pan, S. S., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn, Li, F. D., Liu, Q. W., Xu, S. C., Luo, Y. Y., Li, G. H., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn, and School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026. Strong localization induced anomalous temperature dependence exciton emission above 300 K from SnO{sub 2} quantum dots. United States: N. p., 2015. Web. doi:10.1063/1.4919595.
Pan, S. S., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn, Li, F. D., Liu, Q. W., Xu, S. C., Luo, Y. Y., Li, G. H., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn, & School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026. Strong localization induced anomalous temperature dependence exciton emission above 300 K from SnO{sub 2} quantum dots. United States. doi:10.1063/1.4919595.
Pan, S. S., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn, Li, F. D., Liu, Q. W., Xu, S. C., Luo, Y. Y., Li, G. H., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn, and School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026. Thu . "Strong localization induced anomalous temperature dependence exciton emission above 300 K from SnO{sub 2} quantum dots". United States. doi:10.1063/1.4919595.
@article{osti_22402973,
title = {Strong localization induced anomalous temperature dependence exciton emission above 300 K from SnO{sub 2} quantum dots},
author = {Pan, S. S., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn and Li, F. D. and Liu, Q. W. and Xu, S. C. and Luo, Y. Y. and Li, G. H., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn and School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026},
abstractNote = {SnO{sub 2} quantum dots (QDs) are potential materials for deep ultraviolet (DUV) light emitting devices. In this study, we report the temperature and excitation power-dependent exciton luminescence from SnO{sub 2} QDs. The exciton emission exhibits anomalous blue shift, accompanied with band width reduction with increasing temperature and excitation power above 300 K. The anomalous temperature dependences of the peak energy and band width are well interpreted by the strongly localized carrier thermal hopping process and Gaussian shape of band tails states, respectively. The localized wells and band tails at conduction minimum are considered to be induced by the surface oxygen defects and local potential fluctuation in SnO{sub 2} QDs.},
doi = {10.1063/1.4919595},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}