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Title: Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Abstract

We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model—based on a set of coupled reaction-diffusion equations, one for each facet in the system—accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In{sub 0.12}Ga{sub 0.88}As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In{sub 0.25}Ga{sub 0.75}As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.

Authors:
; ; ; ; ;  [1];  [2]
  1. Tyndall National Institute, “Lee Maltings,” University College Cork, Cork (Ireland)
  2. The Blackett Laboratory, Imperial College London, London SW7 2AZ (United Kingdom)
Publication Date:
OSTI Identifier:
22402940
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ATOMIC FORCE MICROSCOPY; CONCENTRATION RATIO; CRYSTAL STRUCTURE; DECOMPOSITION; DIFFUSION; ELECTRON SCANNING; GALLIUM ARSENIDES; IMAGES; INDIUM ARSENIDES; LIFETIME; NANOWIRES; OPTICAL PROPERTIES; QUANTUM DOTS; SEGREGATION; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE

Citation Formats

Moroni, Stefano T., Dimastrodonato, Valeria, Chung, Tung-Hsun, Juska, Gediminas, Gocalinska, Agnieszka, Pelucchi, Emanuele, and Vvedensky, Dimitri D. Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates. United States: N. p., 2015. Web. doi:10.1063/1.4919362.
Moroni, Stefano T., Dimastrodonato, Valeria, Chung, Tung-Hsun, Juska, Gediminas, Gocalinska, Agnieszka, Pelucchi, Emanuele, & Vvedensky, Dimitri D. Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates. United States. doi:10.1063/1.4919362.
Moroni, Stefano T., Dimastrodonato, Valeria, Chung, Tung-Hsun, Juska, Gediminas, Gocalinska, Agnieszka, Pelucchi, Emanuele, and Vvedensky, Dimitri D. Tue . "Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates". United States. doi:10.1063/1.4919362.
@article{osti_22402940,
title = {Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates},
author = {Moroni, Stefano T. and Dimastrodonato, Valeria and Chung, Tung-Hsun and Juska, Gediminas and Gocalinska, Agnieszka and Pelucchi, Emanuele and Vvedensky, Dimitri D.},
abstractNote = {We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model—based on a set of coupled reaction-diffusion equations, one for each facet in the system—accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In{sub 0.12}Ga{sub 0.88}As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In{sub 0.25}Ga{sub 0.75}As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.},
doi = {10.1063/1.4919362},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 16,
volume = 117,
place = {United States},
year = {2015},
month = {4}
}