Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

Grojo, David; Mouskeftaras, Alexandros; Delaporte, Philippe; Lei, Shuting

doi:10.1063/1.4918669

Title: Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

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Abstract

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10{sup 11 }W cm{sup −2} which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams.

Authors:

Grojo, David; Mouskeftaras, Alexandros; Delaporte, Philippe ^[1]; Lei, Shuting ^[2]

Aix-Marseille University, CNRS, LP3 UMR 7341, F-13288 Marseille (France)
Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, Kansas 66506 (United States)

Publication Date:: Tue Apr 21 00:00:00 EDT 2015

OSTI Identifier:: 22402861

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 117; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BESSEL FUNCTIONS; ENERGY ABSORPTION; ENERGY LOSSES; GLASS; INFRARED RADIATION; LASER BEAM MACHINING; MODIFICATIONS; NONLINEAR PROBLEMS; PHOTONS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES

Citation Formats


                    Grojo, David, Mouskeftaras, Alexandros, Delaporte, Philippe, and Lei, Shuting. Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4918669.

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                    Grojo, David, Mouskeftaras, Alexandros, Delaporte, Philippe, & Lei, Shuting. Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared.  United States.  https://doi.org/10.1063/1.4918669

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                    Grojo, David, Mouskeftaras, Alexandros, Delaporte, Philippe, and Lei, Shuting. 2015.  
        "Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared".  United States.  https://doi.org/10.1063/1.4918669.

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@article{osti_22402861,

  title        = {Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared},

  author       = {Grojo, David and Mouskeftaras, Alexandros and Delaporte, Philippe and Lei, Shuting},

  abstractNote = {We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10{sup 11 }W cm{sup −2} which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams.},

  doi          = {10.1063/1.4918669},

  url          = {https://www.osti.gov/biblio/22402861},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 15,

  volume       = 117,

  place        = {United States},

  year         = {Tue Apr 21 00:00:00 EDT 2015},

  month        = {Tue Apr 21 00:00:00 EDT 2015}

}

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