Highly conductive indium nanowires deposited on silicon by dip-pen nanolithography

Journal Article · Tue Apr 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4917530· OSTI ID:22402851

Kozhukhov, Anton; Volodin, Vladimir ^[1]; Klimenko, Anatoliy; Shcheglov, Dmitriy; Karnaeva, Natalya; Latyshev, Alexander ^[1]

---

1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation)

In this paper, we developed a new dip-pen nanolithography (DPN) method. Using this method, we fabricated conductive nanowires with diameters of 30–50 nm on silicon substrates. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 × 10{sup −3} to 4 × 10{sup −2} Ω cm.

• OSTI ID: 22402851
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 14; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMIC FORCE MICROSCOPY
ELECTRIC CONDUCTIVITY
INDIUM
NANOWIRES
POTENTIALS
SILICON
SUBSTRATES
SURFACES