Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO{sub 2}/p-GaAs metal-oxide-semiconductor capacitors
The effect of atomic layer deposition (ALD) growth temperature on the interfacial characteristics of p-GaAs MOS capacitors with ALD HfO{sub 2} high-k dielectric using tetrakis(ethylmethyl)amino halfnium precursor is investigated in this study. Using the combination of capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) measurements, ALD growth temperature is found to play a large role in controlling the reaction between interfacial oxides and precursor and ultimately determining the interface properties. The reduction of surface oxides is observed to be insignificant for ALD at 200 °C, while markedly pronounced for growth at 300 °C. The corresponding C-V characteristics are also shown to be ALD temperature dependent and match well with the XPS results. Thus, proper ALD process is crucial in optimizing the interface quality.
- OSTI ID:
- 22402752
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
CAPACITANCE
CAPACITORS
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
HAFNIUM OXIDES
INTERFACES
METALS
PRECURSOR
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
X-RAY PHOTOELECTRON SPECTROSCOPY