skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ;  [1]
  1. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
Publication Date:
OSTI Identifier:
22402510
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DEPOSITS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDES; SILICON; TRANSISTORS; ULTRAVIOLET SPECTRA; ULTRAVIOLET SPECTROMETERS

Citation Formats

Ozden, Burcu, Yang, Chungman, Tong, Fei, Khanal, Min P., Mirkhani, Vahid, Sk, Mobbassar Hassan, Ahyi, Ayayi Claude, and Park, Minseo, E-mail: park@physics.auburn.edu. Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]. United States: N. p., 2015. Web. doi:10.1063/1.4921965.
Ozden, Burcu, Yang, Chungman, Tong, Fei, Khanal, Min P., Mirkhani, Vahid, Sk, Mobbassar Hassan, Ahyi, Ayayi Claude, & Park, Minseo, E-mail: park@physics.auburn.edu. Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]. United States. doi:10.1063/1.4921965.
Ozden, Burcu, Yang, Chungman, Tong, Fei, Khanal, Min P., Mirkhani, Vahid, Sk, Mobbassar Hassan, Ahyi, Ayayi Claude, and Park, Minseo, E-mail: park@physics.auburn.edu. Mon . "Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]". United States. doi:10.1063/1.4921965.
@article{osti_22402510,
title = {Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]},
author = {Ozden, Burcu and Yang, Chungman and Tong, Fei and Khanal, Min P. and Mirkhani, Vahid and Sk, Mobbassar Hassan and Ahyi, Ayayi Claude and Park, Minseo, E-mail: park@physics.auburn.edu},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.4921965},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}