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Title: Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Abstract

Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.

Authors:
; ; ;  [1]; ; ;  [2]; ;  [3]
  1. Center for Device Thermography and Reliability, H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)
  2. Centre for High Frequency Engineering, Cardiff University, Cardiff CF24 3QR (United Kingdom)
  3. United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm (Germany)
Publication Date:
OSTI Identifier:
22402507
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTROLUMINESCENCE; ELECTRON MOBILITY; ELECTRON TEMPERATURE; ELECTRONS; GALLIUM NITRIDES; MICROSCOPY; RADIOWAVE RADIATION; SPECTROSCOPY; TRANSISTORS

Citation Formats

Brazzini, Tommaso, E-mail: tommaso.brazzini@bristol.ac.uk, Sun, Huarui, Uren, Michael J., Kuball, Martin, Casbon, Michael A., Lees, Jonathan, Tasker, Paul J., Jung, Helmut, and Blanck, Hervé. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation. United States: N. p., 2015. Web. doi:10.1063/1.4921848.
Brazzini, Tommaso, E-mail: tommaso.brazzini@bristol.ac.uk, Sun, Huarui, Uren, Michael J., Kuball, Martin, Casbon, Michael A., Lees, Jonathan, Tasker, Paul J., Jung, Helmut, & Blanck, Hervé. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation. United States. doi:10.1063/1.4921848.
Brazzini, Tommaso, E-mail: tommaso.brazzini@bristol.ac.uk, Sun, Huarui, Uren, Michael J., Kuball, Martin, Casbon, Michael A., Lees, Jonathan, Tasker, Paul J., Jung, Helmut, and Blanck, Hervé. Mon . "Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation". United States. doi:10.1063/1.4921848.
@article{osti_22402507,
title = {Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation},
author = {Brazzini, Tommaso, E-mail: tommaso.brazzini@bristol.ac.uk and Sun, Huarui and Uren, Michael J. and Kuball, Martin and Casbon, Michael A. and Lees, Jonathan and Tasker, Paul J. and Jung, Helmut and Blanck, Hervé},
abstractNote = {Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.},
doi = {10.1063/1.4921848},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}