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Title: Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Abstract

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

Authors:
; ; ; ; ; ; ;  [1]
  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22402504
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; BORON NITRIDES; DENDRITES; DIELECTRIC MATERIALS; FILMS; FOILS; HEXAGONAL SYSTEMS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NICKEL; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES

Citation Formats

Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., E-mail: lopes@pdi-berlin.de, and Riechert, H. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4921921.
Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., E-mail: lopes@pdi-berlin.de, & Riechert, H. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. United States. doi:10.1063/1.4921921.
Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., E-mail: lopes@pdi-berlin.de, and Riechert, H. Mon . "Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy". United States. doi:10.1063/1.4921921.
@article{osti_22402504,
title = {Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy},
author = {Nakhaie, S. and Wofford, J. M. and Schumann, T. and Jahn, U. and Ramsteiner, M. and Hanke, M. and Lopes, J. M. J., E-mail: lopes@pdi-berlin.de and Riechert, H.},
abstractNote = {Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.},
doi = {10.1063/1.4921921},
journal = {Applied Physics Letters},
number = 21,
volume = 106,
place = {United States},
year = {Mon May 25 00:00:00 EDT 2015},
month = {Mon May 25 00:00:00 EDT 2015}
}
  • We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.
  • Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BNmore » until it may cover entire h-BN flakes.« less
  • Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layersmore » were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.« less