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Title: Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Abstract

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

Authors:
; ; ; ; ; ; ;  [1]
  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22402504
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; BORON NITRIDES; DENDRITES; DIELECTRIC MATERIALS; FILMS; FOILS; HEXAGONAL SYSTEMS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NICKEL; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES

Citation Formats

Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., E-mail: lopes@pdi-berlin.de, and Riechert, H. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4921921.
Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., E-mail: lopes@pdi-berlin.de, & Riechert, H. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. United States. doi:10.1063/1.4921921.
Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., E-mail: lopes@pdi-berlin.de, and Riechert, H. Mon . "Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy". United States. doi:10.1063/1.4921921.
@article{osti_22402504,
title = {Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy},
author = {Nakhaie, S. and Wofford, J. M. and Schumann, T. and Jahn, U. and Ramsteiner, M. and Hanke, M. and Lopes, J. M. J., E-mail: lopes@pdi-berlin.de and Riechert, H.},
abstractNote = {Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.},
doi = {10.1063/1.4921921},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}