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Title: Gate-tunable superconducting weak link behavior in top-gated LaAlO{sub 3}-SrTiO{sub 3}

Abstract

We use a combination of global back-gating and local top-gating to define nanoscale devices in the two-dimensional electron gas at the LaAlO{sub 3}-SrTiO{sub 3} interface, demonstrating an efficient way for much finer spatial control over the properties of the interface, as compared to back-gating alone. The devices show indications of an inhomogenous superconducting weak link. The variation of critical current with perpendicular magnetic field shows evidence of oscillations, which hints at Josephson coupling. The variation of the critical current and zero bias resistance with temperature is consistent with short, overdamped weak links. We show that the applied top-gate voltage provides a strong handle on the properties of these weak links. This technique can be an important tool to define a variety of device structures in this system, allowing us to probe the nature of superconductivity in the LaAlO{sub 3}-SrTiO{sub 3} interface system in different ways.

Authors:
; ;  [1]; ; ; ;  [2]
  1. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)
  2. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22402496
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINATES; ELECTRON GAS; JOSEPHSON EFFECT; LANTHANUM COMPOUNDS; MAGNETIC FIELDS; NANOSTRUCTURES; OSCILLATIONS; STRONTIUM TITANATES; SUPERCONDUCTIVITY

Citation Formats

Bal, V. V., Mehta, M. M., Chandrasekhar, V., Ryu, S., Lee, H., Folkman, C. M., and Eom, C. B. Gate-tunable superconducting weak link behavior in top-gated LaAlO{sub 3}-SrTiO{sub 3}. United States: N. p., 2015. Web. doi:10.1063/1.4921924.
Bal, V. V., Mehta, M. M., Chandrasekhar, V., Ryu, S., Lee, H., Folkman, C. M., & Eom, C. B. Gate-tunable superconducting weak link behavior in top-gated LaAlO{sub 3}-SrTiO{sub 3}. United States. doi:10.1063/1.4921924.
Bal, V. V., Mehta, M. M., Chandrasekhar, V., Ryu, S., Lee, H., Folkman, C. M., and Eom, C. B. Mon . "Gate-tunable superconducting weak link behavior in top-gated LaAlO{sub 3}-SrTiO{sub 3}". United States. doi:10.1063/1.4921924.
@article{osti_22402496,
title = {Gate-tunable superconducting weak link behavior in top-gated LaAlO{sub 3}-SrTiO{sub 3}},
author = {Bal, V. V. and Mehta, M. M. and Chandrasekhar, V. and Ryu, S. and Lee, H. and Folkman, C. M. and Eom, C. B.},
abstractNote = {We use a combination of global back-gating and local top-gating to define nanoscale devices in the two-dimensional electron gas at the LaAlO{sub 3}-SrTiO{sub 3} interface, demonstrating an efficient way for much finer spatial control over the properties of the interface, as compared to back-gating alone. The devices show indications of an inhomogenous superconducting weak link. The variation of critical current with perpendicular magnetic field shows evidence of oscillations, which hints at Josephson coupling. The variation of the critical current and zero bias resistance with temperature is consistent with short, overdamped weak links. We show that the applied top-gate voltage provides a strong handle on the properties of these weak links. This technique can be an important tool to define a variety of device structures in this system, allowing us to probe the nature of superconductivity in the LaAlO{sub 3}-SrTiO{sub 3} interface system in different ways.},
doi = {10.1063/1.4921924},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}