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Title: A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

Abstract

We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.

Authors:
; ; ; ; ; ; ;  [1]
  1. Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22402493
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COBALT COMPOUNDS; IRON BORIDES; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; SUPERCONDUCTING JUNCTIONS; THICKNESS; TUNNEL EFFECT; VIBRATING SAMPLE MAGNETOMETERS

Citation Formats

Zhu, M., E-mail: mzhu@sunycnse.com, Chong, H., Vu, Q. B., Vo, T., Brooks, R., Stamper, H., Bennett, S., and Piccirillo, J. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer. United States: N. p., 2015. Web. doi:10.1063/1.4921967.
Zhu, M., E-mail: mzhu@sunycnse.com, Chong, H., Vu, Q. B., Vo, T., Brooks, R., Stamper, H., Bennett, S., & Piccirillo, J. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer. United States. doi:10.1063/1.4921967.
Zhu, M., E-mail: mzhu@sunycnse.com, Chong, H., Vu, Q. B., Vo, T., Brooks, R., Stamper, H., Bennett, S., and Piccirillo, J. Mon . "A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer". United States. doi:10.1063/1.4921967.
@article{osti_22402493,
title = {A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer},
author = {Zhu, M., E-mail: mzhu@sunycnse.com and Chong, H. and Vu, Q. B. and Vo, T. and Brooks, R. and Stamper, H. and Bennett, S. and Piccirillo, J.},
abstractNote = {We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.},
doi = {10.1063/1.4921967},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}