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Title: Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

Abstract

To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (Sb{sub Zn}) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.

Authors:
; ;  [1]; ; ;  [2];  [3];  [2];  [4];  [4]
  1. School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei 230009, Anhui (China)
  2. Department of Physics, National Cheng Kung University, Tainan 701, Taiwan (China)
  3. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
  4. (China)
Publication Date:
OSTI Identifier:
22402488
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY IONS; DOPED MATERIALS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURES; SYNCHROTRON RADIATION; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Liang, J. K., Su, H. L., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Wu, Y. C., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Chuang, P. Y., Kuo, C. L., Huang, S. Y., Chan, T. S., Huang, J. C. A., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, and Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 106, Taiwan. Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions. United States: N. p., 2015. Web. doi:10.1063/1.4921761.
Liang, J. K., Su, H. L., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Wu, Y. C., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Chuang, P. Y., Kuo, C. L., Huang, S. Y., Chan, T. S., Huang, J. C. A., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, & Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 106, Taiwan. Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions. United States. doi:10.1063/1.4921761.
Liang, J. K., Su, H. L., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Wu, Y. C., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Chuang, P. Y., Kuo, C. L., Huang, S. Y., Chan, T. S., Huang, J. C. A., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw, Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, and Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 106, Taiwan. Mon . "Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions". United States. doi:10.1063/1.4921761.
@article{osti_22402488,
title = {Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions},
author = {Liang, J. K. and Su, H. L., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw and Wu, Y. C., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw and Chuang, P. Y. and Kuo, C. L. and Huang, S. Y. and Chan, T. S. and Huang, J. C. A., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw and Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan and Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 106, Taiwan},
abstractNote = {To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (Sb{sub Zn}) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.},
doi = {10.1063/1.4921761},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}