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Title: Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

Abstract

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

Authors:
 [1];  [2];  [2]; ; ; ; ; ; ;  [3];  [4];  [2]
  1. Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
  2. (United States)
  3. Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)
  4. Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
Publication Date:
OSTI Identifier:
22402476
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; GERMANIUM; HELIUM; HETEROJUNCTIONS; LIQUIDS; MHZ RANGE; READOUT SYSTEMS; SIGNAL-TO-NOISE RATIO; SILICON; TRANSISTORS

Citation Formats

Curry, M. J., Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131, Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123, England, T. D., Bishop, N. C., Ten-Eyck, G., Wendt, J. R., Pluym, T., Lilly, M. P., Carroll, M. S., Carr, S. M., and Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor. United States: N. p., 2015. Web. doi:10.1063/1.4921308.
Curry, M. J., Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131, Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123, England, T. D., Bishop, N. C., Ten-Eyck, G., Wendt, J. R., Pluym, T., Lilly, M. P., Carroll, M. S., Carr, S. M., & Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor. United States. doi:10.1063/1.4921308.
Curry, M. J., Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131, Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123, England, T. D., Bishop, N. C., Ten-Eyck, G., Wendt, J. R., Pluym, T., Lilly, M. P., Carroll, M. S., Carr, S. M., and Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123. Mon . "Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor". United States. doi:10.1063/1.4921308.
@article{osti_22402476,
title = {Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor},
author = {Curry, M. J. and Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 and Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 and England, T. D. and Bishop, N. C. and Ten-Eyck, G. and Wendt, J. R. and Pluym, T. and Lilly, M. P. and Carroll, M. S. and Carr, S. M. and Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123},
abstractNote = {We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.},
doi = {10.1063/1.4921308},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}