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Title: Memristive operation mode of a site-controlled quantum dot floating gate transistor

Abstract

We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.

Authors:
; ; ; ; ; ;  [1];  [1];  [2]
  1. Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22402475
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; HYSTERESIS; INDIUM ARSENIDES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TRANSISTORS

Citation Formats

Maier, P., E-mail: patrick.maier@physik.uni-wuerzburg.de, Hartmann, F., Mauder, T., Emmerling, M., Schneider, C., Kamp, M., Worschech, L., Höfling, S., and SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS. Memristive operation mode of a site-controlled quantum dot floating gate transistor. United States: N. p., 2015. Web. doi:10.1063/1.4921061.
Maier, P., E-mail: patrick.maier@physik.uni-wuerzburg.de, Hartmann, F., Mauder, T., Emmerling, M., Schneider, C., Kamp, M., Worschech, L., Höfling, S., & SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS. Memristive operation mode of a site-controlled quantum dot floating gate transistor. United States. doi:10.1063/1.4921061.
Maier, P., E-mail: patrick.maier@physik.uni-wuerzburg.de, Hartmann, F., Mauder, T., Emmerling, M., Schneider, C., Kamp, M., Worschech, L., Höfling, S., and SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS. Mon . "Memristive operation mode of a site-controlled quantum dot floating gate transistor". United States. doi:10.1063/1.4921061.
@article{osti_22402475,
title = {Memristive operation mode of a site-controlled quantum dot floating gate transistor},
author = {Maier, P., E-mail: patrick.maier@physik.uni-wuerzburg.de and Hartmann, F. and Mauder, T. and Emmerling, M. and Schneider, C. and Kamp, M. and Worschech, L. and Höfling, S. and SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS},
abstractNote = {We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.},
doi = {10.1063/1.4921061},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}