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Title: Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

Abstract

This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

Authors:
; ; ;  [1]
  1. School of Electrical Engineering, Anam-dong 5ga, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22402465
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MEMORY DEVICES; NITROGEN IONS; PULSES; RANDOMNESS; TANTALUM; TANTALUM NITRIDES; VACANCIES

Citation Formats

Kim, Myung Ju, Jeon, Dong Su, Park, Ju Hyun, and Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices. United States: N. p., 2015. Web. doi:10.1063/1.4921349.
Kim, Myung Ju, Jeon, Dong Su, Park, Ju Hyun, & Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices. United States. doi:10.1063/1.4921349.
Kim, Myung Ju, Jeon, Dong Su, Park, Ju Hyun, and Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr. Mon . "Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices". United States. doi:10.1063/1.4921349.
@article{osti_22402465,
title = {Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices},
author = {Kim, Myung Ju and Jeon, Dong Su and Park, Ju Hyun and Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr},
abstractNote = {This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.},
doi = {10.1063/1.4921349},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}