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Title: Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

Abstract

The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

Authors:
; ; ; ; ;  [1]
  1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
Publication Date:
OSTI Identifier:
22402458
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; COALESCENCE; DISLOCATIONS; EPITAXY; GALLIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; SILICON; SURFACES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

He, Yunrui, Wang, Jun, E-mail: wangjun12@bupt.edu.cn, Hu, Haiyang, Wang, Qi, Huang, Yongqing, and Ren, Xiaomin. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth. United States: N. p., 2015. Web. doi:10.1063/1.4921621.
He, Yunrui, Wang, Jun, E-mail: wangjun12@bupt.edu.cn, Hu, Haiyang, Wang, Qi, Huang, Yongqing, & Ren, Xiaomin. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth. United States. doi:10.1063/1.4921621.
He, Yunrui, Wang, Jun, E-mail: wangjun12@bupt.edu.cn, Hu, Haiyang, Wang, Qi, Huang, Yongqing, and Ren, Xiaomin. Mon . "Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth". United States. doi:10.1063/1.4921621.
@article{osti_22402458,
title = {Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth},
author = {He, Yunrui and Wang, Jun, E-mail: wangjun12@bupt.edu.cn and Hu, Haiyang and Wang, Qi and Huang, Yongqing and Ren, Xiaomin},
abstractNote = {The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.},
doi = {10.1063/1.4921621},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}