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Title: Oxide 2D electron gases as a route for high carrier densities on (001) Si

Abstract

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO{sub 3}-SrTiO{sub 3} on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 10{sup 13} cm{sup −2} electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.

Authors:
; ; ;  [1];  [2]; ;  [1];  [2];  [1];  [2];  [2]
  1. Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06511 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22402450
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; ELECTRON GAS; EPITAXY; GADOLINIUM COMPOUNDS; INTERFACES; OXIDES; SEMICONDUCTOR DEVICES; SILICON; STRONTIUM TITANATES; SUBSTRATES; TITANIUM OXIDES

Citation Formats

Kornblum, Lior, Jin, Eric N., Kumah, Divine P., Walker, Fred J., Department of Applied Physics, Yale University, New Haven, Connecticut 06511, Ernst, Alexis T., Broadbridge, Christine C., Department of Physics, Southern Connecticut State University, 501 Crescent Street, New Haven, Connecticut 06515, Ahn, Charles H., Department of Applied Physics, Yale University, New Haven, Connecticut 06511, and Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511. Oxide 2D electron gases as a route for high carrier densities on (001) Si. United States: N. p., 2015. Web. doi:10.1063/1.4921437.
Kornblum, Lior, Jin, Eric N., Kumah, Divine P., Walker, Fred J., Department of Applied Physics, Yale University, New Haven, Connecticut 06511, Ernst, Alexis T., Broadbridge, Christine C., Department of Physics, Southern Connecticut State University, 501 Crescent Street, New Haven, Connecticut 06515, Ahn, Charles H., Department of Applied Physics, Yale University, New Haven, Connecticut 06511, & Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511. Oxide 2D electron gases as a route for high carrier densities on (001) Si. United States. doi:10.1063/1.4921437.
Kornblum, Lior, Jin, Eric N., Kumah, Divine P., Walker, Fred J., Department of Applied Physics, Yale University, New Haven, Connecticut 06511, Ernst, Alexis T., Broadbridge, Christine C., Department of Physics, Southern Connecticut State University, 501 Crescent Street, New Haven, Connecticut 06515, Ahn, Charles H., Department of Applied Physics, Yale University, New Haven, Connecticut 06511, and Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511. Mon . "Oxide 2D electron gases as a route for high carrier densities on (001) Si". United States. doi:10.1063/1.4921437.
@article{osti_22402450,
title = {Oxide 2D electron gases as a route for high carrier densities on (001) Si},
author = {Kornblum, Lior and Jin, Eric N. and Kumah, Divine P. and Walker, Fred J. and Department of Applied Physics, Yale University, New Haven, Connecticut 06511 and Ernst, Alexis T. and Broadbridge, Christine C. and Department of Physics, Southern Connecticut State University, 501 Crescent Street, New Haven, Connecticut 06515 and Ahn, Charles H. and Department of Applied Physics, Yale University, New Haven, Connecticut 06511 and Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511},
abstractNote = {Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO{sub 3}-SrTiO{sub 3} on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 10{sup 13} cm{sup −2} electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.},
doi = {10.1063/1.4921437},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}