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Title: Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Abstract

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

Authors:
; ;  [1];  [2]; ;  [3];  [2];  [4]; ;  [5]
  1. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
  2. Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom)
  3. Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States)
  4. (United States)
  5. Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)
Publication Date:
OSTI Identifier:
22402448
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ANTIMONY ALLOYS; ARSENIC; CRYSTAL LATTICES; CURRENT DENSITY; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; INDIUM ALLOYS; INFRARED SPECTRA; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Craig, A. P., Percy, B., Marshall, A. R. J., Jain, M., Wicks, G., Hossain, K., Golding, T., Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401, McEwan, K., and Howle, C. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. United States: N. p., 2015. Web. doi:10.1063/1.4921468.
Craig, A. P., Percy, B., Marshall, A. R. J., Jain, M., Wicks, G., Hossain, K., Golding, T., Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401, McEwan, K., & Howle, C. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. United States. doi:10.1063/1.4921468.
Craig, A. P., Percy, B., Marshall, A. R. J., Jain, M., Wicks, G., Hossain, K., Golding, T., Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401, McEwan, K., and Howle, C. Mon . "Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb". United States. doi:10.1063/1.4921468.
@article{osti_22402448,
title = {Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb},
author = {Craig, A. P. and Percy, B. and Marshall, A. R. J. and Jain, M. and Wicks, G. and Hossain, K. and Golding, T. and Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 and McEwan, K. and Howle, C.},
abstractNote = {Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.},
doi = {10.1063/1.4921468},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}