Radiative and interfacial recombination in CdTe heterostructures
- Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States)
- National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)
Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.
- OSTI ID:
- 22402406
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
CADMIUM ALLOYS
CADMIUM TELLURIDES
CARRIER LIFETIME
ELECTRONIC STRUCTURE
FILMS
GALLIUM ARSENIDES
INTERFACES
LAYERS
PHOTOLUMINESCENCE
RECOMBINATION
SIMULATION
SUBSTRATES
TELLURIUM ALLOYS