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Title: Femtosecond-laser hyperdoping silicon in an SF{sub 6} atmosphere: Dopant incorporation mechanism

Abstract

In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopant precursor (sulfur hexafluoride). In contrast to previous studies, we show the hyperdoped layer is single crystalline. From the dose dependence on pressure, we conclude that surface adsorbed molecules are the dominant source of the dopant atoms. Using numerical simulation, we estimate the change in flux with increasing number of laser pulses to fit the concentration profiles. We hypothesize that the native oxide plays an important role in setting the surface boundary condition. As a result of the removal of the native oxide by successive laser pulses, dopant incorporation is more efficient during the later stage of laser irradiation.

Authors:
 [1]; ; ;  [2]; ;  [3];  [2];  [4];  [2];  [5];  [1];  [6]
  1. Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States)
  2. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
  3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
  4. (France)
  5. (ECPS), Ecole Polytechnique Fédérale de Lausanne, Station 9, CH-1015 (Switzerland)
  6. (United States)
Publication Date:
OSTI Identifier:
22399353
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BOUNDARY CONDITIONS; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; ELECTROMAGNETIC PULSES; LASER RADIATION; LAYERS; MOLECULES; MONOCRYSTALS; OXIDES; PRECURSOR; SILICON; SULFUR FLUORIDES; SURFACES

Citation Formats

Sher, Meng-Ju, E-mail: msher@stanford.edu, Mangan, Niall M., Lin, Yu-Ting, Brenner, Michael P., Smith, Matthew J., Gradečak, Silvija, Marbach, Sophie, ICFP, Department of Physics, Ecole Normale Superieure, Paris 75005, Schneider, Tobias M., Emergent Complexity in Physical Systems Laboratory, Mazur, Eric, and School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. Femtosecond-laser hyperdoping silicon in an SF{sub 6} atmosphere: Dopant incorporation mechanism. United States: N. p., 2015. Web. doi:10.1063/1.4914520.
Sher, Meng-Ju, E-mail: msher@stanford.edu, Mangan, Niall M., Lin, Yu-Ting, Brenner, Michael P., Smith, Matthew J., Gradečak, Silvija, Marbach, Sophie, ICFP, Department of Physics, Ecole Normale Superieure, Paris 75005, Schneider, Tobias M., Emergent Complexity in Physical Systems Laboratory, Mazur, Eric, & School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. Femtosecond-laser hyperdoping silicon in an SF{sub 6} atmosphere: Dopant incorporation mechanism. United States. doi:10.1063/1.4914520.
Sher, Meng-Ju, E-mail: msher@stanford.edu, Mangan, Niall M., Lin, Yu-Ting, Brenner, Michael P., Smith, Matthew J., Gradečak, Silvija, Marbach, Sophie, ICFP, Department of Physics, Ecole Normale Superieure, Paris 75005, Schneider, Tobias M., Emergent Complexity in Physical Systems Laboratory, Mazur, Eric, and School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. Sat . "Femtosecond-laser hyperdoping silicon in an SF{sub 6} atmosphere: Dopant incorporation mechanism". United States. doi:10.1063/1.4914520.
@article{osti_22399353,
title = {Femtosecond-laser hyperdoping silicon in an SF{sub 6} atmosphere: Dopant incorporation mechanism},
author = {Sher, Meng-Ju, E-mail: msher@stanford.edu and Mangan, Niall M. and Lin, Yu-Ting and Brenner, Michael P. and Smith, Matthew J. and Gradečak, Silvija and Marbach, Sophie and ICFP, Department of Physics, Ecole Normale Superieure, Paris 75005 and Schneider, Tobias M. and Emergent Complexity in Physical Systems Laboratory and Mazur, Eric and School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138},
abstractNote = {In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopant precursor (sulfur hexafluoride). In contrast to previous studies, we show the hyperdoped layer is single crystalline. From the dose dependence on pressure, we conclude that surface adsorbed molecules are the dominant source of the dopant atoms. Using numerical simulation, we estimate the change in flux with increasing number of laser pulses to fit the concentration profiles. We hypothesize that the native oxide plays an important role in setting the surface boundary condition. As a result of the removal of the native oxide by successive laser pulses, dopant incorporation is more efficient during the later stage of laser irradiation.},
doi = {10.1063/1.4914520},
journal = {Journal of Applied Physics},
number = 12,
volume = 117,
place = {United States},
year = {Sat Mar 28 00:00:00 EDT 2015},
month = {Sat Mar 28 00:00:00 EDT 2015}
}