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Title: The influence of an MgO nanolayer on the planar Hall effect in NiFe films

Abstract

The Planar Hall Effect (PHE) in NiFe films was studied using MgO as the buffer and capping layer to reduce the shunt effect. The thermal annealing was found to be effective in increasing the sensitivity. The sensitivity of the magnetic field reached as high as 865 V/AT in a MgO (3 nm)/NiFe (5 nm)/MgO(3 nm)/Ta(3 nm) structure after annealing at 500 °C for 2 h, which is close to the sensitivity of semiconductor Hall Effect (HE) sensors. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to study the sample. The results show that the top crystallization of MgO and NiFe (111) texture were improved by proper annealing. The smooth and clear bottom MgO/NiFe and top NiFe/MgO interface is evident from our data. In addition, the shunt current of Ta was decreased. These combined factors facilitate the improvement of the sensitivity of the magnetic field.

Authors:
 [1];  [2]; ; ; ; ;  [1]; ; ;  [3];  [3];  [4]
  1. Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)
  2. (United States)
  3. Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
  4. (China)
Publication Date:
OSTI Identifier:
22399337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CRYSTALLIZATION; ELECTRIC CURRENTS; HALL EFFECT; INTERFACES; INTERMETALLIC COMPOUNDS; IRON; LAYERS; MAGNESIUM OXIDES; MAGNETIC FIELDS; NICKEL; SEMICONDUCTOR MATERIALS; SENSITIVITY; SENSORS; TANTALUM; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Li, Minghua, E-mail: mhli@ustb.edu.cn, Department of Electrical Engineering, University of California, Los Angeles, California 90095, Zhao, Zhiduo, Ma, Lin, Lu, Xiangan, Teng, Jiao, Yu, Guanghua, Yu, Guoqiang, Amiri, Pedram Khalili, Wang, Kang L., Zhou, Wenping, and Department of Physics, Inner Mongolia University, Hohhot 010021. The influence of an MgO nanolayer on the planar Hall effect in NiFe films. United States: N. p., 2015. Web. doi:10.1063/1.4916336.
Li, Minghua, E-mail: mhli@ustb.edu.cn, Department of Electrical Engineering, University of California, Los Angeles, California 90095, Zhao, Zhiduo, Ma, Lin, Lu, Xiangan, Teng, Jiao, Yu, Guanghua, Yu, Guoqiang, Amiri, Pedram Khalili, Wang, Kang L., Zhou, Wenping, & Department of Physics, Inner Mongolia University, Hohhot 010021. The influence of an MgO nanolayer on the planar Hall effect in NiFe films. United States. doi:10.1063/1.4916336.
Li, Minghua, E-mail: mhli@ustb.edu.cn, Department of Electrical Engineering, University of California, Los Angeles, California 90095, Zhao, Zhiduo, Ma, Lin, Lu, Xiangan, Teng, Jiao, Yu, Guanghua, Yu, Guoqiang, Amiri, Pedram Khalili, Wang, Kang L., Zhou, Wenping, and Department of Physics, Inner Mongolia University, Hohhot 010021. Sat . "The influence of an MgO nanolayer on the planar Hall effect in NiFe films". United States. doi:10.1063/1.4916336.
@article{osti_22399337,
title = {The influence of an MgO nanolayer on the planar Hall effect in NiFe films},
author = {Li, Minghua, E-mail: mhli@ustb.edu.cn and Department of Electrical Engineering, University of California, Los Angeles, California 90095 and Zhao, Zhiduo and Ma, Lin and Lu, Xiangan and Teng, Jiao and Yu, Guanghua and Yu, Guoqiang and Amiri, Pedram Khalili and Wang, Kang L. and Zhou, Wenping and Department of Physics, Inner Mongolia University, Hohhot 010021},
abstractNote = {The Planar Hall Effect (PHE) in NiFe films was studied using MgO as the buffer and capping layer to reduce the shunt effect. The thermal annealing was found to be effective in increasing the sensitivity. The sensitivity of the magnetic field reached as high as 865 V/AT in a MgO (3 nm)/NiFe (5 nm)/MgO(3 nm)/Ta(3 nm) structure after annealing at 500 °C for 2 h, which is close to the sensitivity of semiconductor Hall Effect (HE) sensors. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to study the sample. The results show that the top crystallization of MgO and NiFe (111) texture were improved by proper annealing. The smooth and clear bottom MgO/NiFe and top NiFe/MgO interface is evident from our data. In addition, the shunt current of Ta was decreased. These combined factors facilitate the improvement of the sensitivity of the magnetic field.},
doi = {10.1063/1.4916336},
journal = {Journal of Applied Physics},
number = 12,
volume = 117,
place = {United States},
year = {Sat Mar 28 00:00:00 EDT 2015},
month = {Sat Mar 28 00:00:00 EDT 2015}
}