Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells

Journal Article · Sat Mar 21 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4915533· OSTI ID:22399325

Iwata, Yoshiya; Oto, Takao; Banal, Ryan G.; Funato, Mitsuru; Kawakami, Yoichi ^[1]; Gachet, David ^[2]

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1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
2. Attolight AG, EPFL Innovation Park, Building D, CH-1015 Lausanne (Switzerland)

Inhomogeneity in Al-rich AlGaN/AlN quantum wells is directly observed using our custom-built confocal microscopy photoluminescence (μ-PL) apparatus with a reflective system. The μ-PL system can reach the AlN bandgap in the deep ultra-violet spectral range with a spatial resolution of 1.8 μm. In addition, cathodoluminescence (CL) measurements with a higher spatial resolution of about 100 nm are performed. A comparison of the μ-PL and CL measurements reveals that inhomogeneities, which have different spatial distributions of a few- and sub-micron scales that are superimposed, play key roles in determining the optical properties.

• OSTI ID: 22399325
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM NITRIDES
CATHODOLUMINESCENCE
COMPARATIVE EVALUATIONS
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM NITRIDES
OPTICAL MICROSCOPY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
SPATIAL DISTRIBUTION
SPATIAL RESOLUTION