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Title: Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes

Abstract

We have studied the effect of magnetic field on noise in series of 2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene-based organic light emitting diodes with dominant hole injection, dominant electron injection, and balanced electron and hole injection. The noise spectra of the balanced devices revealed the generation-recombination (g-r) noise term, which we associated with bimolecular electron-hole recombination. The presence of the g-r noise term is correlated with the strong organic magnetoresistance (up to 25%) observed in the balanced devices. The noise spectra also have the shot noise contribution with the Fano factor 0.25–0.4. We found that time constant of the g-r term decreases and the magnitude of shot noise increases when magnetic field is applied. This behavior can be consistently explained within the polaron-polaron model of organic magnetoresistance. We have not found any evidence that the magnetoresistance in studied devices is affected by traps.

Authors:
; ;  [1]; ;  [2]
  1. Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112 (United States)
  2. Ames Laboratory-USDOE, and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
Publication Date:
OSTI Identifier:
22399322
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; ENERGY SPECTRA; FANO FACTOR; HOLES; LIGHT EMITTING DIODES; MAGNETIC FIELDS; MAGNETORESISTANCE; NOISE; POLARONS; RECOMBINATION; TRAPS

Citation Formats

Djidjou, T. K., Basel, Tek, Rogachev, A., Chen, Ying, and Shinar, J.. Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes. United States: N. p., 2015. Web. doi:10.1063/1.4914519.
Djidjou, T. K., Basel, Tek, Rogachev, A., Chen, Ying, & Shinar, J.. Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes. United States. doi:10.1063/1.4914519.
Djidjou, T. K., Basel, Tek, Rogachev, A., Chen, Ying, and Shinar, J.. 2015. "Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes". United States. doi:10.1063/1.4914519.
@article{osti_22399322,
title = {Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes},
author = {Djidjou, T. K. and Basel, Tek and Rogachev, A. and Chen, Ying and Shinar, J.},
abstractNote = {We have studied the effect of magnetic field on noise in series of 2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene-based organic light emitting diodes with dominant hole injection, dominant electron injection, and balanced electron and hole injection. The noise spectra of the balanced devices revealed the generation-recombination (g-r) noise term, which we associated with bimolecular electron-hole recombination. The presence of the g-r noise term is correlated with the strong organic magnetoresistance (up to 25%) observed in the balanced devices. The noise spectra also have the shot noise contribution with the Fano factor 0.25–0.4. We found that time constant of the g-r term decreases and the magnitude of shot noise increases when magnetic field is applied. This behavior can be consistently explained within the polaron-polaron model of organic magnetoresistance. We have not found any evidence that the magnetoresistance in studied devices is affected by traps.},
doi = {10.1063/1.4914519},
journal = {Journal of Applied Physics},
number = 11,
volume = 117,
place = {United States},
year = 2015,
month = 3
}
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