skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

Abstract

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality (0002) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by (0002) oriented wurtzite GaN and (111) oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H{sub 2} into Ar and/or N{sub 2} during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H{sub 2} into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted (33{sup ¯}02) orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H{sub 2} into N{sub 2} due to the complex reaction between H{sub 2} and N{sub 2}.

Authors:
 [1]; ;  [1];  [2];  [1];  [2]
  1. Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
  2. (Canada)
Publication Date:
OSTI Identifier:
22399318
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL GROWTH; CUBIC LATTICES; GALLIUM NITRIDES; HYDROGEN; INTERFACES; LAYERS; MAGNETRONS; ORIENTATION; PHASE TRANSFORMATIONS; SILICON CARBIDES; SILICON OXIDES; SPUTTERING; SUBSTRATES; SURFACES; TEXTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TWO-DIMENSIONAL SYSTEMS; X-RAY DIFFRACTION

Citation Formats

Shen, Huaxiang, E-mail: shenhuaxiang@gmail.com, Zhu, Guo-Zhen, Botton, Gianluigi A., Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4L7, Kitai, Adrian, and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure. United States: N. p., 2015. Web. doi:10.1063/1.4914955.
Shen, Huaxiang, E-mail: shenhuaxiang@gmail.com, Zhu, Guo-Zhen, Botton, Gianluigi A., Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4L7, Kitai, Adrian, & Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure. United States. doi:10.1063/1.4914955.
Shen, Huaxiang, E-mail: shenhuaxiang@gmail.com, Zhu, Guo-Zhen, Botton, Gianluigi A., Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4L7, Kitai, Adrian, and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7. Sat . "Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure". United States. doi:10.1063/1.4914955.
@article{osti_22399318,
title = {Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure},
author = {Shen, Huaxiang, E-mail: shenhuaxiang@gmail.com and Zhu, Guo-Zhen and Botton, Gianluigi A. and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4L7 and Kitai, Adrian and Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7},
abstractNote = {The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality (0002) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by (0002) oriented wurtzite GaN and (111) oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H{sub 2} into Ar and/or N{sub 2} during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H{sub 2} into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted (33{sup ¯}02) orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H{sub 2} into N{sub 2} due to the complex reaction between H{sub 2} and N{sub 2}.},
doi = {10.1063/1.4914955},
journal = {Journal of Applied Physics},
number = 11,
volume = 117,
place = {United States},
year = {Sat Mar 21 00:00:00 EDT 2015},
month = {Sat Mar 21 00:00:00 EDT 2015}
}