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Title: Memory effect in silicon time-gated single-photon avalanche diodes

Abstract

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

Authors:
; ;  [1]; ; ;  [2];  [1];  [3]
  1. Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)
  2. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)
  3. (Italy)
Publication Date:
OSTI Identifier:
22399315
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ILLUMINANCE; NOISE; PHOTONS; SEMICONDUCTOR JUNCTIONS; SIGNALS; SILICON; WAVELENGTHS

Citation Formats

Dalla Mora, A., Contini, D., E-mail: davide.contini@polimi.it, Di Sieno, L., Tosi, A., Boso, G., Villa, F., Pifferi, A., and CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano. Memory effect in silicon time-gated single-photon avalanche diodes. United States: N. p., 2015. Web. doi:10.1063/1.4915332.
Dalla Mora, A., Contini, D., E-mail: davide.contini@polimi.it, Di Sieno, L., Tosi, A., Boso, G., Villa, F., Pifferi, A., & CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano. Memory effect in silicon time-gated single-photon avalanche diodes. United States. doi:10.1063/1.4915332.
Dalla Mora, A., Contini, D., E-mail: davide.contini@polimi.it, Di Sieno, L., Tosi, A., Boso, G., Villa, F., Pifferi, A., and CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano. Sat . "Memory effect in silicon time-gated single-photon avalanche diodes". United States. doi:10.1063/1.4915332.
@article{osti_22399315,
title = {Memory effect in silicon time-gated single-photon avalanche diodes},
author = {Dalla Mora, A. and Contini, D., E-mail: davide.contini@polimi.it and Di Sieno, L. and Tosi, A. and Boso, G. and Villa, F. and Pifferi, A. and CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano},
abstractNote = {We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.},
doi = {10.1063/1.4915332},
journal = {Journal of Applied Physics},
number = 11,
volume = 117,
place = {United States},
year = {Sat Mar 21 00:00:00 EDT 2015},
month = {Sat Mar 21 00:00:00 EDT 2015}
}