Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
- Engineering Science Directorate, Army Research Office, Research Triangle Park, North Carolina 27703 (United States)
Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher light extraction efficiency in deep-ultra-violet light-emitting diodes.
- OSTI ID:
- 22399297
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
COMPARATIVE EVALUATIONS
EFFICIENCY
GALLIUM NITRIDES
INTEGRALS
INTERFERENCE
LIGHT EMITTING DIODES
PERIODICITY
PHOTOLUMINESCENCE
QUANTUM WELLS
REFLECTION
SURFACES
THIN FILMS
VISIBLE RADIATION