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Title: InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Abstract

In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

Authors:
 [1];  [2]; ;  [3];  [3];  [2]
  1. International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. (Japan)
  3. Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22399279
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ALUMINIUM NITRIDES; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DESIGN; EPITAXY; GALLIUM NITRIDES; HOLES; ILLUMINANCE; INDIUM COMPOUNDS; INTERFACES; PERFORMANCE; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; QUANTUM WELLS; SAPPHIRE; SOLAR CELLS; THIN FILMS; ULTRAVIOLET RADIATION; VISIBLE RADIATION

Citation Formats

Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp, JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo, and JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties. United States: N. p., 2015. Web. doi:10.1063/1.4914908.
Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp, JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo, & JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties. United States. doi:10.1063/1.4914908.
Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp, JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo, and JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076. Sat . "InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties". United States. doi:10.1063/1.4914908.
@article{osti_22399279,
title = {InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties},
author = {Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp and JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076 and Liao, Meiyong and Koide, Yasuo and Sumiya, Masatomo and JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076},
abstractNote = {In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.},
doi = {10.1063/1.4914908},
journal = {Journal of Applied Physics},
number = 10,
volume = 117,
place = {United States},
year = {Sat Mar 14 00:00:00 EDT 2015},
month = {Sat Mar 14 00:00:00 EDT 2015}
}