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Title: Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation

Abstract

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deeper understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct lasermore » ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.« less

Authors:
 [1];  [2];  [3];  [4];  [5];  [1];  [6]
  1. Faculty of Applied Sciences and Mechatronics, Munich University of Applied Sciences, Lothstraße 34, 80335 Munich (Germany)
  2. (SAOT), Friedrich-Alexander-Universität Erlangen-Nürnberg, Paul-Gordan-Straße 6, 91052 Erlangen (Germany)
  3. Technische Universität Ilmenau, Institut für Physik, Weimarer Straße 25., 98693 Ilmenau (Germany)
  4. (Germany)
  5. Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)
  6. Friedrich-Alexander-Universität Erlangen-Nürnberg, Lehrstuhl für Photonische Technologien, Konrad-Zuse-Straße 3-5, 91052 Erlangen (Germany)
Publication Date:
OSTI Identifier:
22399273
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABLATION; ABSORPTION; DAMAGE; DIELECTRIC MATERIALS; EFFICIENCY; ELECTROMAGNETIC PULSES; IRRADIATION; LASER RADIATION; LAYERS; NONLINEAR PROBLEMS; PHYSICAL RADIATION EFFECTS; REFLECTIVITY; SILICON; SILICON NITRIDES; SILICON SOLAR CELLS; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Rapp, S., E-mail: rapp@hm.edu, Erlangen Graduate School in Advanced Optical Technologies, Heinrich, G., CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, 99099 Erfurt, Wollgarten, M., Huber, H. P., and Schmidt, M. Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation. United States: N. p., 2015. Web. doi:10.1063/1.4914457.
Rapp, S., E-mail: rapp@hm.edu, Erlangen Graduate School in Advanced Optical Technologies, Heinrich, G., CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, 99099 Erfurt, Wollgarten, M., Huber, H. P., & Schmidt, M. Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation. United States. doi:10.1063/1.4914457.
Rapp, S., E-mail: rapp@hm.edu, Erlangen Graduate School in Advanced Optical Technologies, Heinrich, G., CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, 99099 Erfurt, Wollgarten, M., Huber, H. P., and Schmidt, M. Sat . "Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation". United States. doi:10.1063/1.4914457.
@article{osti_22399273,
title = {Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation},
author = {Rapp, S., E-mail: rapp@hm.edu and Erlangen Graduate School in Advanced Optical Technologies and Heinrich, G. and CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, 99099 Erfurt and Wollgarten, M. and Huber, H. P. and Schmidt, M.},
abstractNote = {In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deeper understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.},
doi = {10.1063/1.4914457},
journal = {Journal of Applied Physics},
number = 10,
volume = 117,
place = {United States},
year = {Sat Mar 14 00:00:00 EDT 2015},
month = {Sat Mar 14 00:00:00 EDT 2015}
}